tp3061 Freescale Semiconductor, Inc, tp3061 Datasheet - Page 2

• Manufacturer Part Number: tp3061
• Description: Uhf Power Transistor Npn Silicon
• Manufacturer: Freescale Semiconductor, Inc

ELECTRICAL CHARACTERISTICS — continued
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS
NOTE:
TP3061
2
DC Current Gain
Output Capacitance (2)
Common–Emitter Amplifier Power Gain
Collector Efficiency
Load Mismatch
Overdrive
RF INPUT
50
(I C = 1.0 Adc, V CE = 10 Vdc)
(V CB = 26 V, I E = 0, f = 1.0 MHz)
(V CC = 26 V, P out = 45 W, I CQ = 200 mA, f = 960 MHz)
(V CC = 26 V, P out = 45 W, f = 960 MHz)
(V CC = 26 V, P out = 45 W, I CQ = 200 mA,
Load VSWR = 5:1, at all phase angles)
(V CC = 26 V, P in = 15 W, f = 960 MHz)
2. Value of “C ob ” is that of die only. It is not measurable in TP3061 because of internal matching network.
C6
R1
C5
C4
+
C1, C4, C7, C12 — Capacitor Chip 0805 330 pF 5%
C2 — Capacitor Chip 82 pF ATC
C5, C11, C8 — Capacitor Chip 0805 15 nF 5%
C6, C9, C10 — Capacitor Chip 0805 6.0, 8.0 F 35 V
L1, L2 — 1.5 Turns #18 AWG Choke
R1 — Chip Resistor 47
R2 — Chip Resistor 270
Characteristic
R2
C1
R3
C7
1206 5%
0805 5%
T1
T2
L2
C8
R5
Figure 1. 960 MHz Test Circuit
R4
(T C = 25°C unless otherwise noted.)
+
C9
D.U.T.
C6
T3
Symbol
L1
h FE
C ob
OD
G p
R3 — Chip Resistor 47
R4 — Chip Resistor 100
R5 — Trimmer 1.0 k
T1 — SMD Transistor MJD31C or Similar
T2 — SMD Transistor
T3 — Voltage Regulator 7805
Board Material — 1/50″, Teflon Glass, r = 2.5,
Cu Clad 2 Sides, 35 m Thick
+
C11
C10
C12
Min
8.0
15
45
50
+ V CC
No Degradation in Output Power
No Degradation in Output Power
Before and After Test
MOTOROLA RF DEVICE DATA
Typ
8.8
—
60
53
0805 5%
0805 5%
C2
Max
100
—
—
—
RF OUTPUT
Unit
50
pF
dB
—
%