km68257c Samsung Semiconductor, Inc., km68257c Datasheet - Page 3

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km68257c

Manufacturer Part Number
km68257c
Description
32kx8 Bit High Speed Static Ram 5v Operating , Evolutionary Pin Out. Operated At Commercial Temperature Range.
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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KM68257C/CL
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Rating" may cause permanent damage to the device. This is a stress ra ting only and func-
RECOMMENDED DC OPERATING CONDITIONS
* V
** V
DC AND OPERATING CHARACTERISTICS
* V
CAPACITANCE*
* NOTE : Capacitance is sampled and not 100% tested.
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
tional operation of the device at these at these or any other conditions above those indicated in the operating sections of thi s specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Ground
Input Low Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Input/Output Capacitance
Input Capacitance
IL
CC
IH
(Min) = -2.0(Pulse Width 10ns) for I 20
(Max) = V
=5.0V 5% Temp.=25 C
Parameter
Parameter
CC+
CC
Item
2.0V(Pulse Width 10ns) for I 20
Supply Relative to V
Parameter
(T
A
=25 C, f=1.0MHz)
SS
Symbol
SS
V
I
V
V
§ Ì
I
I
I
SB
OH1*
I
CC
LO
SB
OH
LI
OL
Symbol
1
Symbol
V
V
V
V
CC
C
SS
C
IH
IL
§ Ì
I/O
IN
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
I
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
I
OUT
OL
OH
OH1
IN
OUT
IN
=8mA
=-4mA
= V
=0mA
=0.1mA
V
= V
IH
IL,
CC
SS
or OE=V
V
-0.2V or V
SS
IN
to V
V
(T
Symbol
to V
= V
IN
T
A
V
CC
, V
-0.5*
Test Conditions
P
T
CC
STG
Min
Test Conditions
=0 to 70 C,V
4.5
2.2
CC
IH
CC
D
A
0
IH
OUT
- 3 -
-0.2V,
IH
or V
or WE=V
IN
V
V
(T
I/O
IN
A
IL,
0.2V
=0V
=0V
=0 to 70 C)
IL
CC
=5.0V 10% unless otherwise specified)
Typ
5.0
0
-
-
Normal
-0.5 to 7.0
-0.5 to 7.0
-65 to 150
12ns
15ns
20ns
L-ver
Rating
0 to 70
1.0
MIN
-
-
V
Min
CC
2.4
-2
-2
-
-
-
-
-
-
-
-
Max
5.5
0.8
+0.5**
0
PRELIMINARY
Max
8
7
CMOS SRAM
Max
3.95
165
150
140
0.1
0.4
40
2
2
2
-
Unit
W
February-1996
V
V
C
C
Unit
V
V
V
V
Unit
pF
pF
Unit
§ Ì
§ Ì
§ Ì
Rev 3.0
V
V
V
A
A

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