fc803 Sanyo Semiconductor Corporation, fc803 Datasheet
fc803
Manufacturer Part Number
fc803
Description
Silicon Schottky Barrier Diode
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.FC803.pdf
(2 pages)
Features
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
Note) The specifications shown above are for each individual diode.
trr Test Circuit
R
N
A
S
J
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R
F
R
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· Marking:803
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Ordering number :EN3193A
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· Low forward voltage (V F max=0.55V) .
· Fast reverse recorvery time (trr max=10ns) .
· Composite type with 4 diodes contained in the CP
· The FC803 is formed with twi chips, each being
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package currently in use, improving the mounting
efficiency greatly.
equivalent to the SB007W03C, placed in one
package.
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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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Package Dimensions
unit:mm
1233A
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Electrical Connection
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22898HA (KT)/53196GI (KOTO) /O259MO, TS No.3193-1/2
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30V, 70mA Rectifier
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Silicon Schottky Barrier Diode
[FC803]
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30
R
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–55 to +125
–55 to +125
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3.0
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FC803
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1:Anode
2:Anode
3:Cathode
4:Anode
5:Anode
6:Cathode
SANYO:CP6
0.55
30
35
70
a
10
2
x
5
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U
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fc803 Summary of contents
Page 1
... Fast reverse recorvery time (trr max=10ns) . · Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC803 is formed with twi chips, each being equivalent to the SB007W03C, placed in one package. Specifications Absolute Maximum Ratings 25˚C ...
Page 2
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 1998. Specifications and information herein are subject to change without notice. FC803 PS No.3193-2/2 ...