at603 Poseico Spa, at603 Datasheet

at603

Manufacturer Part Number

at603

Description

Phase Control Thyristor

Manufacturer

Poseico Spa

Datasheet

1.AT603.pdf (3 pages)

Current page: 1 of 3
Download datasheet (30Kb)

FINAL SPECIFICATION

Symbol

I² t

di/dt

dv/dt

Q rr

PHASE CONTROL THYRISTOR

I rr

RRM

RSM

DRM

RRM

DRM

T (AV)

TSM

T(TO)

FGM

RGM

th(j-h)

th(c-h)

feb 97 - ISSUE : 03

BLOCKING

CONDUCTING

SWITCHING

GATE

MOUNTING

ANSALDO

Characteristic

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Repetitive peak off-state voltage

Repetitive peak reverse current

Repetitive peak off-state current

Mean on-state current

Surge on-state current

I² t

On-state voltage

Threshold voltage

On-state slope resistance

Critical rate of rise of on-state current, min.

Critical rate of rise of off-state voltage, min.

Gate controlled delay time, typical

Circuit commutated turn-off time, typical

Reverse recovery charge

Peak reverse recovery current

Holding current, typical

Latching current, typical

Gate trigger voltage

Gate trigger current

Non-trigger gate voltage, min.

Peak gate voltage (forward)

Peak gate current

Peak gate voltage (reverse)

Peak gate power dissipation

Average gate power dissipation

Thermal impedance, DC

Thermal impedance

Operating junction temperature

Mounting force

Mass

ORDERING INFORMATION : AT603 S 16

standard specification

Ansaldo Trasporti s.p.a.

Unita' Semiconduttori

V=VRRM

V=VDRM

180° sin, 50 Hz, Th=55°C, double side cooled

180° sin, 50 Hz, Tc=85°C, double side cooled

sine wave, 10 ms

without reverse voltage

On-state current =

From 75% VDRM up to 860 A, gate 10V 5ohm

Linear ramp up to 70% of VDRM

VD=100V, gate source 10V, 10 ohm , tr=.5 µs

dV/dt = 20 V/µs linear up to 75% VDRM

di/dt=-20 A/µs, I= 560 A

VR= 50 V

VD=5V, gate open circuit

VD=5V, tp=30µs

VD=5V

VD=VDRM

Pulse width 100 µs

Junction to heatsink, double side cooled

Case to heatsink, double side cooled

Conditions

Repetitive voltage up to

Mean on-state current

Surge current

AT603

VDRM&VRRM/100

1000 A

Via N. Lorenzi 8 - I 16152 GENOVA - ITALY

Tel. int. +39/(0)10 6556549 - (0)10 6556488

Tx 270318 ANSUSE I -

Fax Int. +39/(0)10 6442510

[°C]

125

1600

720

8.8

0.580

1600

1700

1600

0.91

0.25

-30 / 125

8.0 / 9.0

720

630

387 x1E3

200

500

250

300

700

200

150

8.8

1.5

1.3

3.5

Value

mohm

°C/kW

Unit

A/µs

V/µs

A²s

µC

µs

°C

Related parts for at603

at603 Summary of contents

Page 1

... R Thermal impedance th(c-h) T Operating junction temperature j F Mounting force Mass ORDERING INFORMATION : AT603 S 16 standard specification Via N. Lorenzi 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - AT603 Repetitive voltage up to Mean on-state current Surge current Conditions ...

Page 2

... AT603 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 03 DISSIPATION CHARACTERISTICS Th [°C] 130 120 110 100 90 30° 200 P [W] F(AV) 1400 1200 1000 800 30° 600 400 200 0 0 200 SINE WAVE 60° 90° 120° 180° 400 600 ...

Page 3

... AT603 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 03 ON-STATE CHARACTERISTIC Tj = 125 °C 2500 2000 1500 1000 500 0 0.6 1.1 1.6 2.1 On-state Voltage [V] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 50.0 45.0 40.0 35.0 30.0 25.0 20.0 15.0 10.0 5.0 0.0 0.001 0.01 0.1 1 t[s] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < ...

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