74lvc1g66 NXP Semiconductors, 74lvc1g66 Datasheet - Page 20

• Manufacturer Part Number: 74lvc1g66
• Description: Bilateral Switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
13. Abbreviations
Table 13.
14. Revision history
Table 14.
74LVC1G66_6
Product data sheet
Acronym
CMOS
TTL
HBM
ESD
MM
DUT
Document ID
74LVC1G66_6
Modifications:
74LVC1G66_5
Modifications:
74LVC1G66_4
74LVC1G66_3
74LVC1G66_2
74LVC1G66_1
Abbreviations
Revision history
Description
Complementary Metal Oxide Semiconductor
Transistor-Transistor Logic
Human Body Model
ElectroStatic Discharge
Machine Model
Device Under Test
Release date
20070827
20070807
20040413
20021115
20020529
20011030
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Section 10 “Static
Changed: Conditions for OFF-state and ON-state leakage current.
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name when appropriate.
Added type number 74LVC1G66GM (XSON6/SOT886 package)
Added type number 74LVC1G66GF (XSON6/SOT891 package)
Section 2
Added: Wide supply voltage range from 1.65 V to 5.5 V
Changed: JESD78 Class II to JESD78 Class I
Added: Enable input accepts voltages up to 5.5 V
Section 8 “Limiting
Added: Limiting values of switch parameters.
Added: Derating factors of the applicable packages
Section 9 “Recommended operating
Added: Recommended operation conditions of switch parameters.
Section 10 “Static
Changed: Maximum values of ON resistance (peak) parameters and graphics.
Changed: Conditions for input leakage and supply current.
Section 11 “Dynamic
Changed: Typical values of the charge injection.
“Features”:
Data sheet status
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
Product specification
Rev. 06 — 27 August 2007
characteristics”:
characteristics”:
values”:
characteristics”:
conditions”:
Change notice
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74LVC1G66
Supersedes
74LVC1G66_5
74LVC1G66_4
74LVC1G66_3
74LVC1G66_2
74LVC1G66_1
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© NXP B.V. 2007. All rights reserved.
Bilateral switch
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