ne552r479a-t1a-a California Eastern Laboratories, ne552r479a-t1a-a Datasheet - Page 3

• Manufacturer Part Number: ne552r479a-t1a-a
• Description: Nec S 3.0 V, 0.25 W L&s-band Medium Power Silicon Ld-mosfet
• Manufacturer: California Eastern Laboratories

TYPICAL PERFORMANCE CURVES
30
25
20
15
10
30
25
20
15
10
30
25
20
15
10
5
5
5
0
0
0
Frequency = 2.45 GHz
V
I
Frequency = 2.0 GHz
V
I
Frequency = 2.45 GHz
V
I
dq
dq
dq
OUTPUT POWER, DRAIN CURRENT
ds
ds
ds
OUTPUT POWER, DRAIN CURRENT
OUTPUT POWER, DRAIN CURRENT
= 100 mA
= 150 mA
= 200 mA
EFFICIENCY vs. INPUT POWER
= 3.0 V
= 3.0 V
= 3.0 V
EFFICIENCY vs. INPUT POWER
EFFICIENCY vs. INPUT POWER
5
5
5
Input Power,P
Input Power,P
Input Power,P
10
10
10
P
out
I
ds
in
in
15
in
15
15
(dBm)
(dBm)
I
(dBm)
ds
P
η
η
P
out
η
d
d
out
d
20
20
20
ηa
ηa
dd
I
ds
ηa
dd
dd
25
25
25
1250
1000
1250
1000
0
1250
1000
0
750
500
250
0
750
500
250
750
500
250
(T
A
100
100
100
75
50
75
50
25
75
0
50
25
0
= 25°C)
25
0
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
30
25
20
15
10
-10
-20
-30
-40
-50
-60
-70
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
30
25
20
15
10
5
5
Average Two Tone Output Power, P
0
5
0
Frequency = 2.45 GHz
V
P
Frequency = 2.45 GHz
∆ Frequency = 1 MHz
V
I
Frequency = 2.0 GHz
V
P
IMD vs. TWO TONE OUTPUT POWER
dq
OUTPUT POWER, DRAIN CURRENT
OUTPUT POWER, DRAIN CURRENT
ds
in
ds
ds
in
= 19 dBm
= 200 mA
= 19 dBm
= 3.0 V
= 3.0 V
= 3.0 V
Gate to Source Voltage, V
Gate to Source Voltage, V
10
1
1
P
ηa
15
I
η
ds
out
d
dd
2
2
IM3
I
ds
P
ηa
η
out
d
dd
20
IM5
3
3
gs
25
gs
(V)
out
(V)
(dBm)
30
4
4
1250
1000
1250
1000
0
0
750
500
250
750
500
250
100
100
75
50
75
50
25
0
25
0