mt4htf6464ay-80e Micron Semiconductor Products, mt4htf6464ay-80e Datasheet

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mt4htf6464ay-80e

Manufacturer Part Number
mt4htf6464ay-80e
Description
128mb, 256mb, 512mb X64, Sr 240-pin Ddr2 Sdram Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR2 SDRAM UDIMM
MT4HTF1664A – 128MB
MT4HTF3264A – 256MB
MT4HTF6464A – 512MB
For the latest component data sheet, refer to Micron's Web site:
Table 1:
Features
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 128MB (16 Meg x 64), 256MB (32 Meg x 64),
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Single rank
• Multiple internal device banks for concurrent
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
PDF: 09005aef80ed6fda/Source: 09005aef80ed6fb0
HTF4C16_32_64x64A.fm - Rev. F 4/07 EN
Speed
Grade
(UDIMM)
PC2-5300 or PC2-6400
512MB (64 Meg x 64)
operation
-80E
-800
-667
-53E
-40E
DD
DDSPD
= V
DD
= +1.7V to +3.6V
Q = +1.8V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
t
1
CL = 6
CK
800
Data Rate (MT/s)
CL = 5
800
667
667
1
CL = 4
533
533
533
533
400
www.micron.com
Figure 1:
Notes: 1. End of life.
Options
• Operating temperature
• Package
• Frequency/CAS latency
• PCB height
PCB height 30.0mm (1.18in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 240-pin DIMM (Pb-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
– 30mm (1.18in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for industrial temperature
3. Contact Micron for product availability.
4. Not available in 128MB module density.
CL = 3
module offerings.
400
400
400
240-Pin UDIMM (MO-237 R/C C)
t
(ns)
12.5
RCD
15
15
15
15
C
C
≤ +95°C)
≤ +85°C)
©2003 Micron Technology, Inc. All rights reserved.
4
4
3
3
2, 3, 4
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
None
-80E
-800
-667
-53E
-40E
Y
(ns)
I
t
55
55
55
55
55
RC

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mt4htf6464ay-80e Summary of contents

Page 1

DDR2 SDRAM UDIMM MT4HTF1664A – 128MB MT4HTF3264A – 256MB MT4HTF6464A – 512MB For the latest component data sheet, refer to Micron's Web site: Features • 240-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300 ...

Page 2

Table 2: Addressing Parameter Refresh count Row address Device bank address Device page size per bank Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 128MB Modules Base device: MT47H16M16, Module 2 Part Number ...

Page 3

Pin Assignments and Descriptions Table 6: Pin Assignments 240-Pin UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 61 REF DQ0 33 DQ24 63 4 DQ1 34 ...

Page 4

Table 7: Pin Descriptions Symbol Type ODT0 Input On-die termination: ODT (registered HIGH) enables termination resistance internal to (SSTL_18) the DDR2 SDRAM. When enabled, ODT is only applied to the following pins: DQ, DQS, DQS#, and CB. The ODT input ...

Page 5

Functional Block Diagram Figure 2: Functional Block Diagram S0 DQS0 DQS0# DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DQS1# DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DQS2# DM2 DQ16 DQ17 DQ18 DQ19 ...

Page 6

General Description The MT4HTF1664A, MT4HTF3264A, and MT4HTF6464A DDR2 SDRAM modules are high-speed, CMOS, dynamic random-access 128MB, 256MB, and 512MB memory modules organized in a x64 configuration. These DDR2 SDRAM modules use internally configured 4-bank (256Mb, 512Mb) or 8-bank (1Gb) DDR2 ...

Page 7

Electrical Specifications Stresses greater than those listed in Table 8 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions above those indicated in each ...

Page 8

I Specifications DD Table 10: DDR2 I Specifications and Conditions – 128MB DD Values shown for MT47H16M16 DDR2 SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter/Condition Operating one bank ...

Page 9

Table 11: DDR2 I Specifications and Conditions – 256MB DD Values shown for MT47H32M16 DDR2 SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16) component data sheet Parameter/Condition Operating one bank active-precharge current: t ...

Page 10

Table 12: DDR2 I Specifications and Conditions (Die Revision A) – 512MB DD Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) component data sheet Parameter/Condition Operating one bank ...

Page 11

Table 13: DDR2 I Specifications and Conditions (Die Revision E) – 512MB DD Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (32 Meg x 16) component data sheet Parameter/Condition Operating one bank ...

Page 12

Serial Presence-Detect Table 14: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input ...

Page 13

Table 16: Serial Presence-Detect Matrix Byte Description 0 Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on SDRAM 4 Number of column addresses on ...

Page 14

Table 16: Serial Presence-Detect Matrix (continued) Byte Description 27 MIN row precharge time, 28 MIN row active-to-row active, 29 MIN RAS#-to-CAS# delay, 30 MIN active-to-precharge time, 31 Module rank density 32 Address and command setup time, 33 Address and command ...

Page 15

Table 16: Serial Presence-Detect Matrix (continued) Byte Description 46 PLL relock time 47–61 Optional features, not supported 62 SPD revision 63 Checksum for bytes 0–62 64 Manufacturer’s JEDEC ID code 65–71 Manufacturer’s JEDEC ID code 72 Manufacturing location 73–90 Module ...

Page 16

Module Dimensions Figure 3: 240-Pin DDR2 UDIMM 2.00 (0.079) R (4X) U1 2.50 (0.098) D (2X) 2.30 (0.091) TYP PIN 1 2.20 (0.087) TYP 1.0 (0.039) 1.0 (0.039) TYP 70.68 (2.78) 3.05 (0.12) TYP PIN 240 55.0 (2.165) TYP Notes: ...

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