s9018t SeCoS Halbleitertechnologie GmbH, s9018t Datasheet

s9018t

Manufacturer Part Number

s9018t

Description

Npn Plastic-encapsulate Transistors

Manufacturer

SeCoS Halbleitertechnologie GmbH

Datasheet

1.S9018T.pdf (1 pages)

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01-Jun-2002 Rev. A

ELECTRICAL CHARACTERISTICS (Tamb=25 C

CLASSIFICATION OF h

FEATURE

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Rank

Range

Power dissipation

Collector current

Collector-base voltage

Operating and storage junction temperature range

Parameter

Tj, T

CM:

(BR)CBO

stg

: 0.4

28-45

0.05

: 25

-55

FE(1)

W (Tamb=25 C)

to +150

39-60

A suffix of "-C" specifies halogen & lead-free

V(BR)

Symbol

CBO

CEO

EBO

FE(1)

(sat)

RoHS Compliant Product

CBO

CEO

EBO

54-80

Test

Ic= 0. 1mA, I

Ic= 100

unless otherwise specified)

=10mA, I

= 100

f =

= 5V, I

=5 V, I

= 20V, I

= 15V, I

= 3V, I

72-108

400MHz

conditions

NPN Plastic-Encapsulate Transistors

A, I

= 1mA

=5 mA

=1mA

(1.27 Typ.)

0. 46

97-146

4.55

Any changing of specification will not be informed individual

+0.1

–0.1

MIN

600

S9018T

±0.2

2.54

±0.1

TO-92

1.25

TYP

0.43

132-198

+0.2

–0.2

+0.08

–0.07

3.5

1: Emitter

2: Base

3: Collector

±0.2

MAX

270

0.1

0.5

1.4

180-270

UNIT

MHz

Page 1 of 1

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