nss20601cf8 ON Semiconductor, nss20601cf8 Datasheet

nss20601cf8

Manufacturer Part Number

nss20601cf8

Description

20 V, 8.0 A, Low Vce Sat Npn Transistor Transistor Chipfet?

Manufacturer

ON Semiconductor

Datasheet

1.NSS20601CF8.pdf (6 pages)

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NSS20601CF8T1G

20 V, 8.0 A, Low V

NPN Transistor

transistors are miniature surface mount devices featuring ultra low

saturation voltage (V

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e

driven directly from PMU's control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR-4 @ 100 mm

2. FR-4 @ 500 mm

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

May, 2007 - Rev. 1

Collector‐Emitter Voltage

Collector‐Base Voltage

Emitter‐Base Voltage

Collector Current - Continuous

Collector Current - Peak

Electrostatic Discharge

Total Device Dissipation, T

Derate above 25°C

Thermal Resistance,

Junction-to-Ambient

Total Device Dissipation, T

Derate above 25°C

Thermal Resistance,

Junction-to-Ambient

Thermal Resistance,

Junction-to-Lead #1

Junction and Storage

Temperature Range

ON Semiconductor's e

Typical applications are DC-DC converters and power management

This is a Pb-Free Device

Characteristic

Rating

, 1 oz copper traces.

CE(sat)

= 25°C)

= 25°C

) and high current gain capability. These

PowerEdge family of low V

qJA

qJL

Symbol

(Note 1)

(Note 2)

ESD

(Note 1)

(Note 2)

CEO

CBO

EBO

, T

PowerEdge devices to be

stg

CE(sat)

-55 to

+150

HBM Class 3B

Max

11.1

830

150

6.0

8.0

6.7

1.4

MM Class C

mW/°C

°C/W

CE(sat)

Unit

Vdc

Adc

°C

†For information on tape and reel specifications,

NSS20601CF8T1G

NPN LOW V

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

EQUIVALENT R

Device

20 VOLTS, 8.0 AMPS

ORDERING INFORMATION

MARKING DIAGRAM

VD = Specific Device Code

M = Month Code

G = Pb-Free Package

PIN CONNECTIONS

http://onsemi.com

BASE

CE(sat)

(Pb-Free)

COLLECTOR

1, 2, 3, 6, 7, 8

VD M

Package

ChipFET

EMITTER

Publication Order Number:

CASE 1206A

ChipFET]

DS(on)

STYLE 4

TRANSISTOR

NSS20601CF8/D

Tape & Reel

31 mW

Shipping

3000/

†

Related parts for nss20601cf8

nss20601cf8 Summary of contents

Page 1

... E B ORDERING INFORMATION Device Package Shipping NSS20601CF8T1G ChipFET 3000/ (Pb-Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS20601CF8/D † ...

Page 2

... Storage ( 750 mA mA Fall ( 750 mA mA Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. NSS20601CF8T1G (T = 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CBO V (BR)EBO I CBO I EBO CE(sat) ...

Page 3

... Figure 3. DC Current Gain vs. Collector Current 1 0.9 -55 °C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.2 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 5. Base Emitter Turn-On Voltage vs. Collector Current NSS20601CF8T1G TYPICAL CHARACTERISTICS 0. 100 C B 0.25 150°C 0.20 25°C 0.15 0.10 -55 °C 0. 0.001 Figure 2. Collector Emitter Saturation Voltage 1.3 1 ...

Page 4

... V , EMITTER BASE VOLTAGE (V) EB Figure 7. Input Capacitance 10 1 0.1 0.01 0.01 NSS20601CF8T1G TYPICAL CHARACTERISTICS 140 C (pF) 130 ibo 120 110 100 1.0 S 1.0 mS 100 mS Thermal Limit Single Pulse Test 25° ...

Page 5

... A 2.032 0.08 1 2.362 0.093 0.457 8X 0.018 Basic Style *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NSS20601CF8T1G PACKAGE DIMENSIONS ChipFETt CASE 1206A-03 ISSUE H NOTES ...

Page 6

... N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSS20601CF8/D ...

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