BT137B-600D NXP Semiconductors, BT137B-600D Datasheet

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BT137B-600D

Manufacturer Part Number
BT137B-600D
Description
Triacs Logic Level
Manufacturer
NXP Semiconductors
Datasheet
1.BT137B-600D.pdf (6 pages)
Philips Semiconductors
GENERAL DESCRIPTION
Passivated, sensitive gate triac in a
plastic envelope suitable for surface
mounting, intended for use in general
purpose bidirectional switching and
phase control applications. This device
is intended to be interfaced directly to
microcontrollers, logic integrated circuits
and other low power gate trigger circuits.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/ s.
June 2001
Triacs
logic level
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
PIN
t
stg
j
mb
DRM
GM
GM
G(AV)
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
main terminal 2
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
DESCRIPTION
t for fusing
PIN CONFIGURATION
CONDITIONS
full sine wave; T
full sine wave; T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms period
TM
G
QUICK REFERENCE DATA
/dt = 0.2 A/ s
= 12 A; I
SYMBOL
V
I
I
T(RMS)
TSM
DRM
1
2
G
3
= 0.2 A;
1
mb
j
= 25 ˚C prior to
PARAMETER
Repetitive peak off-state voltage
RMS on-state current
Non-repetitive peak on-state current
mb
102 ˚C
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
T2
MAX.
Product specification
600
150
125
0.5
65
71
21
50
50
50
10
BT137B-600D
8
2
5
5
1
MAX. UNIT
600
65
8
Rev 1.000
UNIT
A/ s
A/ s
A/ s
A/ s
A
G
˚C
˚C
W
W
V
A
A
A
A
V
V
A
A
T1
2
s

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BT137B-600D Summary of contents

Page 1

... ˚C prior to j surge 16 0 / T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period 1 Product specification BT137B-600D MAX. UNIT 600 SYMBOL MIN. MAX. UNIT 1 - 600 ...

Page 2

... 125 ˚C D DRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform 0 DRM(max / Product specification BT137B-600D MIN. TYP. MAX. UNIT - - 2.0 K 2.4 K K/W MIN. TYP. MAX. UNIT - 6.5 10 ...

Page 3

... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 T time 1.2 1 0.8 0.6 0.4 1000 - Product specification BT137B-600D BT137 102 100 Tmb / C 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 102˚C. mb VGT(Tj 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...

Page 4

... Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT137B-600D max typ 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. versus th j-mb pulse width ...

Page 5

... Dimensions in mm Net Mass: 1.4 g 2.54 (x2) MOUNTING INSTRUCTIONS Dimensions in mm Notes 1. Plastic meets UL94 V0 at 1/8". June 2001 10.3 max 11 max 15.4 0.85 max (x2) Fig.13. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting. 5 Product specification BT137B-600D 4.5 max 1.4 max 2.5 0.5 17.5 Rev 1.000 ...

Page 6

... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT137B-600D Rev 1.000 ...

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