BT134-D SemiWell Semiconductor Co., Ltd., BT134-D Datasheet

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BT134-D

Manufacturer Part Number
BT134-D
Description
Bi-directional Triode Thyristor
Manufacturer
SemiWell Semiconductor Co., Ltd.
Datasheet
Bi-Directional Triode Thyristor
Features
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
Absolute Maximum Ratings
Mar, 2004. Rev. 0
Symbol
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
High Commutation dv/dt
Sensitive Gate Triggering 4 Mode
I
P
V
T(RMS)
T
I
P
V
G(AV)
I
TSM
DRM
I
GM
T
STG
GM
GM
2
J
SemiWell
t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
2
t
for Fusing
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Semiconductor
Parameter
T(RMS)
= 4 A )
( T
J
= 25°C unless otherwise specified )
T
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
t = 10ms
Over any 20ms period
C
= 104 °C, Full Sine wave
Condition
Symbol
TO-126
Preliminary
- 40 ~ 125
- 40 ~ 150
3
Ratings
1.T1
2
25/27
600
3.1
0.5
1
BT134-D
4
5
2
5
▼ ▲
2.T2
3.Gate
Units
A
°C
°C
W
W
V
A
A
A
V
2
s
1/6

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BT134-D Summary of contents

Page 1

... Semiconductor Co., Ltd., All rights reserved 25°C unless otherwise specified ) J Condition T = 104 °C, Full Sine wave C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t = 10ms Over any 20ms period Preliminary BT134-D Symbol 2.T2 ○ ▼ ▲ ○ 3.Gate 1.T1 ○ TO-126 Ratings Units ...

Page 2

... BT134-D Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage TM + Ⅰ I GT1 - Ⅱ I GT1 Gate Trigger Current - Ⅲ I GT3 + Ⅳ I GT3 + Ⅰ V GT1 - Ⅱ V GT1 Gate Trigger Voltage - Ⅲ V GT3 + Ⅳ V GT3 V Non-Trigger Gate Voltage GD Critical Rate of Rise Off-State ...

Page 3

... Conduction Angle 100 Fig 6. Gate Trigger Voltage vs 0 -50 10 BT134-D o 125 1.0 1.5 2.0 2.5 On-State Voltage [V] Allowable Case Temperature θ θ π π 2 θ θ θ θ = 120 360° ...

Page 4

... BT134-D Fig 7. Gate Trigger Current vs. Junction Temperature 10 1 0.1 - Junction Temperature [ Fig 9. Gate Trigger Characteristics Test Circuit 10Ω ▼ ▲ A ● ● Test Procedure Ⅰ 4 GT1 - I GT1 GT3 + I GT3 -1 10 100 150 10Ω 10Ω ▼ ▲ ...

Page 5

... K 0.7 L φ Typ. Max. Min. 7.9 0.295 11.2 0.425 14.7 0.559 2.9 0.106 3.8 2.5 1.5 0.047 2.3 4.6 0.62 0.019 0.86 0.028 1.4 3 φ BT134-D Inch Typ. Max. 0.311 0.441 0.579 0.114 0.150 0.098 0.059 0.091 0.181 0.024 0.034 0.055 0.126 L 1. Gate 5/6 ...

Page 6

... BT134-D TO-126 Package Dimension, Forming Dim. Min. A 7.5 B 10.8 C 14 0. φ 6/6 mm Typ. Max. 7.9 0.295 11.2 0.425 14.7 0.559 2.9 0.106 3.8 2.5 1.5 0.047 2.3 4.6 0.62 0.019 0.86 0.028 1.4 5.0 3 φ Inch Min. Typ. Max. 0.311 0.441 0.579 0.114 0.150 0.098 ...

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