irfr430a International Rectifier Corp., irfr430a Datasheet - Page 2

• Manufacturer Part Number: irfr430a
• Description: Smps Mosfet
• Manufacturer: International Rectifier Corp.

Diode Characteristics

IRFR430A/IRFU430A
Dynamic @ T
‚
ƒ
Static @ T
Notes:
V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
V
fs
2
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
I
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
T
Starting T
SD
J
G
eff.
= 25 , I
150°C.
5.0A, di/dt
/ T
J
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 25°C, L = 11mH
AS
J
= 25°C (unless otherwise specified)
= 5.0A. (See Figure 12)
J
320A/µs, V
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
DD
V
(BR)DSS
,
„
…
Pulse width
C
–––
as C
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
2.3
Min. Typ. Max. Units
oss
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
0.60 –––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
–––
490
750
while V
–––
–––
–––
410
8.7
4.5
1.4
27
17
16
75
25
51
300µs; duty cycle
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
620
1.7
4.5
6.5
1.5
2.1
25
24
13
5.0
DS
20
is rising from 0 to 80% V
V/°C
µA
nA
nC
ns
µC
pF
ns
V
V
S
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs „
integral reverse
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
D
GS
DS
GS
GS
GS
J
J
= 5.0A
= 5.0A
= 25°C, I
= 25°C, I
= 50 ,See Fig. 10
= 15
= V
= 500V, V
= 400V, V
= 50V, I
= 400V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V, See Fig. 6 and 13 „
= 250V
= 0V
= 0V, V
= 0V, V
= 0V, V
2%.
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 5.0A, V
= 5.0A
= 250µA
= 3.0A
= 3.0A
GS
GS
DSS
= 0V to 400V …
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
= 0V, T
= 0V
.
D
www.irf.com
= 1mA
GS
„
„
J
G
= 0V „
= 125°C
S
+L
D
S
D
)