si4176dy Vishay, si4176dy Datasheet

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si4176dy

Manufacturer Part Number
si4176dy
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Document Number: 65539
S09-2430-Rev. A, 16-Nov-09
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Ordering Information: Si4176DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
30
(V)
S
S
G
S
0.027 at V
0.020 at V
1
2
3
4
R
DS(on)
GS
GS
Top View
SO-8
J
(Ω)
= 4.5 V
= 10 V
= 150 °C)
b, d
N-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
10.4
D
D
12
D
D
(A)
Steady State
a
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted
4.7 nC
g
(Typ.)
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switch
• Low Current dc-to-dc
• Notebook
Definition
Typical
g
42
19
and UIS Tested
®
Power MOSFET
- 55 to 150
8.3
6.6
2.4
1.5
Limit
G
± 20
2
12
9.7
4.2
3.2
30
40
10
b, c
5
5
b, c
b, c
b, c
b, c
a
N-Channel MOSFET
Maximum
S
D
53
25
Vishay Siliconix
Si4176DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si4176dy Summary of contents

Page 1

... Top View Ordering Information: Si4176DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si4176DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 65539 S09-2430-Rev. A, 16-Nov- 2.0 2.5 3.0 700 600 500 400 300 200 100 30 40 1.8 1.6 1 1.2 1.0 0.8 0 Si4176DY Vishay Siliconix ° ° 125 ° 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si4176DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.2 2 250 µA D 1.8 1.6 1.4 1.2 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.05 0.04 0.03 0. °C J 0.01 0.00 0 0.8 1.0 1 100 125 150 0 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65539 S09-2430-Rev. A, 16-Nov- 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4176DY Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating www.vishay.com 5 ...

Page 6

... Si4176DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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