fll810iq-3c Eudyna Devices Inc, fll810iq-3c Datasheet

fll810iq-3c

Manufacturer Part Number

fll810iq-3c

Description

L-band High Power Gaas Fet

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLL810IQ-3C.pdf (4 pages)

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Edition 1.1

October 2001

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)

CASE STYLE: IQ

Note 1: The condition for GL is the same as Pout except Pin = 25.0dBm.

FEATURES

• Push-Pull Configuration

• High Power Output: 80W

• High PAE: 50%.

• Excellent Linearity

• Suitable for class AB operation.

• Hermetically Sealed Package

DESCRIPTION

The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.

This device offers excellent linearity, ease of matching, and greater consistency

in covering the frequency band of 2.5 to 2.7 GHz. This new product is uniquely

suited for use in MMDS applications as it offers high gain, long term reliability

and ease of use.

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

Drain Current

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Output Power

Linear Gain (Note 1)

Power-Added Efficiency

Drain Current

Thermal Resistance

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

1. The drain-source operating voltage (V DS ) should not exceed 12 volts.

2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 5Ω.

Item

Symbol

stg

DSR

DSS

GSO

add

out

f = 2.6 GHz

Pin = 40.0dBm

Channel to Case

= 5.0A

= -2.2mA

= 5V, V

= 5V, I

= 12V

Tc = 25°C

Condition

Conditions

= 220mA

= 0V

L-Band High Power GaAs FET

Min.

48.0

11.0

-0.1

-65 to +175

-5

FLL810IQ-3C

Rating

+175

136

-5

Limits

Typ.

49.0

12.0

11.5

-0.3

0.8

Max.

15.0

-0.5

1.1

Unit

°C

°C/W

dBm

Unit

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fll810iq-3c Summary of contents

Page 1

... Suitable for class AB operation. • Hermetically Sealed Package DESCRIPTION The FLL810IQ- Watt GaAs FET that employs a push-pull design. This device offers excellent linearity, ease of matching, and greater consistency in covering the frequency band of 2.5 to 2.7 GHz. This new product is uniquely suited for use in MMDS applications as it offers high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25° ...

Page 2

... FLL810IQ-3C L-Band High Power GaAs FET OUTPUT POWER vs. FREQUENCY 12V 2.4 2.5 2.6 Frequency (GHz) 39dBm 34dBm -30 30dBm -40 26dBm -50 -60 22dBm 2.7 2.8 OUTPUT POWER & η add vs. INPUT POWER 12V Pout η add ...

Page 3

... Download S-Parameters, click here 3 FLL810IQ-3C S22 MAG ANG .841 167.3 .805 167.9 .790 169.2 .777 170.2 .795 171.0 .818 169.7 .819 167.1 .781 163.5 .668 162.4 .560 170.4 .556 -175.3 ...

Page 4

... FLL810IQ-3C L-Band High Power GaAs FET 6 4-R1.3±0.2 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...

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