mrf6s23100h Freescale Semiconductor, Inc, mrf6s23100h Datasheet - Page 7

• Manufacturer Part Number: mrf6s23100h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
0.0001
0.001
0.01
100
0.1
10
1
64 DPCH, 67% Clipping, Single - Carrier Test Signal
0
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
2
PEAK−TO−AVERAGE (dB)
4
10
10
10
10
Figure 12. MTTF Factor versus Junction Temperature
9
8
7
6
90
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
6
100 110
TYPICAL CHARACTERISTICS
W - CDMA TEST SIGNAL
120
T
8
J
, JUNCTION TEMPERATURE (°C)
D
2
130
for MTTF in a particular application.
140
10
150
160
+20
+30
−10
−20
−30
−40
−50
−60
−70
−80
170
0
−25
180 190
−IM3 in
3.84 MHz BW
−20
Figure 14. 2-Carrier W-CDMA Spectrum
−15
200
2
MRF6S23100HR3 MRF6S23100HSR3
−10
210
−ACPR in
3.84 MHz BW
f, FREQUENCY (MHz)
−5
3.84 MHz
Channel BW
0
+ACPR in
3.84 MHz BW
5
10
+IM3 in
3.84 MHz BW
15
20
25
7