ma795 Panasonic Corporation of North America, ma795 Datasheet
ma795
Manufacturer Part Number
ma795
Description
Schottky Barrier Diodes Sbd
Manufacturer
Panasonic Corporation of North America
Datasheet
1.MA795.pdf
(3 pages)
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Schottky Barrier Diodes (SBD)
MA3S795
Silicon epitaxial planar type
For switching
I Features
I Absolute Maximum Ratings T
I Electrical Characteristics T
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
Publication date: August 2001
• High-density mounting is possible
• Low forward voltage V
• Low V
• Optimum for high frequency rectification because of its short
• SS-Mini type 3-pin package
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
Detection efficiency
reverse recovery time (t
2. Rated input/output frequency: 2 GHz
and the leakage of current from the operating equipment.
F
Parameter
type of MA3X704A (MA704A)
Parameter
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Bias Application Unit N-50BU
*
F
A
rr
, optimum for low voltage rectification
)
(MA795)
Symbol
Wave Form Analyzer
(SAS-8130)
R
i
V
= 50 Ω
I
T
V
I
T
FM
RM
stg
F
R
a
j
Symbol
= 25°C
V
V
C
I
t
a
η
R
rr
F1
F2
t
= 25°C
−55 to +125
Rating
150
125
3. * : t
30
30
30
V
I
I
V
I
I
V
R
F
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
L
R
R
in
= 1 mA
= 30 mA
= I
= 1 mA, R
SKH00062AED
rr
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
measuring instrument
R
V
= 10 mA
R
(peak)
Unit
t
mA
mA
°C
°C
r
V
V
Conditions
Input Pulse
10%
t
t
δ = 0.05
L
p
r
90%
= 0.35 ns
, f = 30 MHz
= 2 µs
= 100 Ω
L
t
= 10 pF
p
t
Marking Symbol: M2M
Internal Connection
I
(0.51)
F
1 : Anode
2 : N.C.
3 : Cathode
EIAJ : SC-89
I
I
R
Output Pulse
F
R
L
= 10 mA
= 10 mA
= 100 Ω
3°
(0.80)
1.60
t
I
rr
1 2
rr
= 1 mA
+0.05
–0.03
(0.80)
Min
3
0.28
t
±0.05
0.28
(0.51)
1
±0.05
Typ
1.5
65
3
1
2
SSMini3-F2 Package
Max
0.3
30
1
Unit: mm
0.12
0.60
Unit
µA
pF
ns
%
+0.05
–0.02
+0.05
–0.03
V
1
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ma795 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA3S795 (MA795) Silicon epitaxial planar type For switching I Features • High-density mounting is possible • Low forward voltage V , optimum for low voltage rectification F • Low V type of MA3X704A (MA704A) F • Optimum for high frequency rectification because of its short reverse recovery time (t ...
Page 2
MA3S795 75°C 25° 125°C T –20° −1 10 − 0.4 0.8 1.2 1.6 2.0 2.4 Forward voltage ...
Page 3
... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...