mtd4n20e Freescale Semiconductor, Inc, mtd4n20e Datasheet - Page 5

• Manufacturer Part Number: mtd4n20e
• Description: Tm Data Sheet Tmos E-fet.tm Power Field Effect Transistor Dpak For Surface Mount
• Manufacturer: Freescale Semiconductor, Inc

maximum simultaneous drain–to–source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (T C ) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
traverse any load line provided neither rated peak current
(I DM ) nor rated voltage (V DSS ) is exceeded and the transition
time (t r ,t f ) do not exceed 10 s. In addition the total power av-
eraged over a complete switching cycle must not exceed
(T J(MAX) – T C )/(R JC ).
in switching circuits with unclamped inductive loads. For
Motorola TMOS Power MOSFET Transistor Device Data
The Forward Biased Safe Operating Area curves define the
Switching between the off–state and the on–state may
A Power MOSFET designated E–FET can be safely used
18
16
14
12
10
8
6
4
2
0
0
Figure 8. Gate–To–Source and Drain–To–Source
Q1
2
Voltage versus Total Charge
Q3
Q T , TOTAL CHARGE (nC)
4
QT
Q2
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
4.0
3.2
2.4
1.6
0.8
0
6
0.50
Figure 10. Diode Forward Voltage versus Current
V GS = 0 V
T J = 25°C
0.55
V DS
V GS
V SD , SOURCE–TO–DRAIN VOLTAGE (VOLTS)
8
I D = 4 A
T J = 25°C
0.60
SAFE OPERATING AREA
0.65
10
180
160
140
120
100
80
60
40
20
0
0.70
0.75
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction
temperature.
drain–to–source avalanche at currents up to rated pulsed
current (I DM ), the energy rating is specified at rated
continuous current (I D ), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous I D can safely be assumed to
equal the values indicated.
Although many E–FETs can withstand the stress of
100
10
0.80
1
1
V DD = 100 V
I D = 4 A
V GS = 10 V
T J = 25°C
0.85
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
0.90
t d(off)
t d(on)
R G , GATE RESISTANCE (OHMS)
0.95
t f
t r
10
MTD4N20E
5
100