fqb12p10 Fairchild Semiconductor, fqb12p10 Datasheet - Page 3

• Manufacturer Part Number: fqb12p10
• Description: Fqb12p10 / Fqi12p10 100v P-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
1600
1400
1200
1000
800
600
400
200
10
10
0.8
0.6
0.4
0.2
0.0
10
10
-1
-2
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : -4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
V
GS
10
C
C
-V
-V
C
oss
iss
rss
DS
DS
, Drain-Source Voltage [V]
-I
, Drain-Source Voltage [V]
D
10
10
, Drain Current [A]
0
0
V
20
GS
" Notes :
= - 20V
1. 250# s Pulse Test
2. T
V
GS
C
= - 10V
= 25!
C
C
C
iss
oss
rss
= C
= C
= C
10
" Note : T
30
gs
gd
ds
10
1
+ C
+ C
1
" Notes :
gd
gd
1. V
2. f = 1 MHz
(C
J
ds
= 25!
GS
= shorted)
= 0 V
40
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
175!
Variation vs. Source Current
0.5
4
25!
175!
4
-V
-V
25!
Q
SD
and Temperature
GS
G
1.0
, Source-Drain Voltage [V]
8
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
DS
-55!
V
= -80V
DS
1.5
12
V
6
= -50V
DS
= -20V
2.0
16
" Notes :
" Notes :
1. V
2. 250# s Pulse Test
1. V
2. 250# s Pulse Test
" Note : I
8
DS
GS
= -40V
= 0V
2.5
20
D
= -11.5 A
Rev. B, August 2002
3.0
10
24