fqp5n60 Fairchild Semiconductor, fqp5n60 Datasheet
fqp5n60
Manufacturer Part Number
fqp5n60
Description
600v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
1.FQP5N60.pdf
(8 pages)
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©2000 Fairchild Semiconductor International
FQP5N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
DSS
GSS
AS
AR
D
J
L
Symbol
Symbol
, T
JC
CS
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25° C)
Parameter
T
C
FQP Series
C
C
TO-220
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 5.0A, 600V, R
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 9.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
DS(on)
Typ
0.5
--
--
G
-55 to +150
FQP5N60
= 2.0
3.15
0.96
600
300
120
300
5.0
5.0
4.5
20
12
30
D
S
@V
Max
1.04
62.5
GS
--
QFET
QFET
QFET
QFET
= 10 V
April 2000
Units
W/°C
Units
°CW
°CW
°CW
V/ns
mJ
mJ
Rev. A, April 2000
°C
°C
W
V
A
A
A
V
A
TM
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