ph1819-4n Tyco Electronics, ph1819-4n Datasheet

ph1819-4n

Manufacturer Part Number

ph1819-4n

Description

Wireless Bipolar Power Transistor, 4w 1.78-1.90ghz

Manufacturer

Tyco Electronics

Datasheet

1.PH1819-4N.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

PH1819-4N

Manufacturer:

M/A-COM

Quantity:

5 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

PH1819-4N

Manufacturer:

MA/COM

Quantity:

20 000

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Typical Optimum Device Impedances

Electrical Characteristics

Absolute Maximum Ratings at 25°C

Features

Wireless

1.78 - 1.90 GHz

3rd Order IMD

Power Gain

Collector Efficiency

Input Return Loss

Load MismatchTolerance

Thermal Resistance

Parameter

Collector-Emitter Breakdown Voltage

Collector-Emitter Leakage Current

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Forward Current Gain

Collector Current

Power Dissipation

JunctionTemperature

Storage Temperature

Collector-Base Voltage

Collector-EmitterVoltage

Emitter-Base Voltage

Parameter

NPN Silicon Microwave Power Transistor

Designed for Linear Amplifier Applications

Class AB:

Class A: +44 dBm Typ 3rd Order Intercept

Common Emitter Configuration

Internal Input Impedance

Diffused Emitter Ballasting

Gold Metallization

F(MHz)

1780

1850

1900

an AMP comoanv

-34

dBc Typ 3rd IMD at 4 Watts PEP

System

Bipolar Power Transistor,

3.5+i9.3

3.1 + j9.2

3.3 + jS.9

q(Q)

Symbol

V cm

‘c

ST0

CES

ES0

Matching

at 25°C

VSWR-T

Symbol

-55 to +150

BVcEo

BV,,,

IMD,

h FE

CES

Rating

19.5

200

7.5

0.7

3.0

4.5 + j5.2

4.8 + j5.5

3.5+j5.6

LAO(Q)

Min

3.0

Point

“C/W

Units

“C

1O:l

Max

-30

120

2.0

(

Units

dBc

V,:=26 V, I,,-,=20 mA, PO,,.=4 W PEP, F=1850 MHz, AF=lOO kHz

V&6

V,,t26 V, I,,=20 mA, Poe4

V,,=26 V, l,c=20 mA, POUT=4 W PEP, F=1850 MHz, AF=l 00 kHz

V,,=26 V, I,,=20 mA, PO,=4 W PEP, F=1850 MHz,

V,,=5 V, I,=O.l A

I,=5

V,,=24 V

I,=5

1,=2.5 mA

UN-ESS

+’

I;;;;:;;)

, c&43*.25)

,253~.DlO

V, l,c=20 mA, Po,,r=4 W PEP, F=1850 MHz,

OTHERWlSE

1 ;

ND-ED,

;

Test Conditions

’

TOLERANZES

W PEP, Ft1850 MHz, AF=lOO kHz

.‘24 77,

,975

ARE

PH1819-4N

:M1, L,HETERS

INCt-3 t COY

AF=~ 00

AF=lOO

.0045?

--A-;

=,13MM)

:2.79>

OOl:,

kHz

,110

v2.00

Related parts for ph1819-4n

ph1819-4n Summary of contents

Page 1

... V&6 V, l,c=20 mA, Po,,r=4 W PEP, F=1850 MHz, % V,,t26 V, I,,=20 mA, Poe4 1O:l - V,,=26 V, l,c=20 mA, POUT=4 W PEP, F=1850 MHz, AF=l 00 kHz -30 V,,=26 V, I,,=20 mA, PO,=4 W PEP, F=1850 MHz, - dBc LAO(Q) 3.5+j5.6 ( 4.5 + j5.2 4.8 + j5.5 4W PH1819-4N ,975 .‘24 77, i .0045? OOl:, J --A ’ I :2.79> INCt-3 t COY ND-ED, TOLERANZES ARE :M1, L,HETERS ...

Page 2

... CR1 5 TURNS Ll 407 OHMS Rl 7 TURNS RLl PH1819-4N Ql ROGERS TYPE: BOARD 4W "CC Q DIMENSIONS IN MILS i-IS-!- pF ATC SIZE A pF CHIP UF 50 VOLTS DIODE OF NO, 20 AWG ON ,160” l/4 WATT CIF Nil, 24 AWG ON 3 OHM l/4 6010,S ,025” THICK, PH1819- OUTPUT 50 OHMS DIA WATT ER = 10.5 v2.00 ...

Page 3

Wireless Bipolar Power Transistor, 4W Typical Broadband Performance GAIN-EFFICIENCY vs FREQUENCY P,,,=4.0 W PEP V&6 V I,,=20 Efficiency 1780 1850 FREOUENCY (MHz) GAIN vs P F1=1850.0 MHz F2=f%O. 1 MHz ,I I,=300 mA. 22 ...

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