ipd13n03lag Infineon Technologies Corporation, ipd13n03lag Datasheet - Page 6

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ipd13n03lag

Manufacturer Part Number
ipd13n03lag
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD13N03LAG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.2
9 Drain-source on-state resistance
R
11 Typ. Capacitances
C =f(V
DS(on)
10
10
10
10
24
20
16
12
4
3
2
1
DS
=f(T
8
4
0
10000
1000
100
0
10
-60
); V
j
); I
GS
D
5
-20
=0 V; f =1 MHz
=30 A; V
98 %
10
20
GS
V
Coss
=10 V
T
Ciss
DS
Crss
j
15
60
[°C]
typ
[V]
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
D
j
GS
-20
IPS13N03LA G
IPD13N03LA G
=V
0.5
175 °C
DS
20
20 µA
V
T
SD
j
1.0
60
[°C]
[V]
200 µA
25 °C, 98%
100
IPU13N03LA G
IPF13N03LA G
1.5
25 °C
140
175 °C, 98%
2008-04-14
180
2.0

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