spp3413w Sync Power Corp, spp3413w Datasheet
spp3413w
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spp3413w Summary of contents
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... SPP3413W P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3413W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ...
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... PIN DESCRIPTION Pin ORDERING INFORMATION Part Number SPP3413WS23RGB ※ Week Code : ※ SPP3413WS23RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (T =25 Unless otherwise noted) ℃ A Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(T ...
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... SPP3413W P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (T =25 Unl ess otherwise noted) ℃ A Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge ...
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... SPP3413W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2011/08/18 Page 4 ...
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... SPP3413W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2011/08/18 Page 5 ...
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... SPP3413W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2011/08/18 Page 6 ...
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... SPP3413W P-Channel Enhancement Mode MOSFET SOT-23 PACKAGE OUTLINE Ver.1 2011/08/18 Page 7 ...
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... SPP3413W P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice ...