MBM29DL32TF Fujitsu, MBM29DL32TF Datasheet

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MBM29DL32TF

Manufacturer Part Number
MBM29DL32TF
Description
32M-Bit Dual Operation Flash Memory
Manufacturer
Fujitsu
Datasheet

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TM
SPANSION Flash Memory
Data Sheet
September 2003
TM
This document specifies SPANSION
memory products that are now offered by both Advanced Micro Devices and
Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
TM
There is no change to this datasheet as a result of offering the device as a SPANSION
product. Future routine
revisions will occur when appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
TM
Please contact your local AMD or Fujitsu sales office for additional information about SPANSION
memory
solutions.

Related parts for MBM29DL32TF

MBM29DL32TF Summary of contents

Page 1

... Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these products, please use only the Ordering Part Numbers listed in this document. ...

Page 2

... CMOS BIT MBM29DL32TF/BF DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized bytes of 8 bits each words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3 supply. 12 and 5 ...

Page 3

... MBM29DL32TF/BF are organized into four physical banks; Bank A, Bank B, Bank C and Bank D, which are considered to be four separate memory arrays operations the Fujitsu’s standard 3.0 V only Flash memories, with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank ...

Page 4

... Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/Busy Output (RY/BY) Hardware method for detection of program or erase cycle completion • Automatic Sleep Mode When addresses remain stable, automatically switch themselves to low power mode. MBM29DL32TF/ PROMs Normal Bend Type) ...

Page 5

... MBM29DL32TF/BF (Continued) • Low V write inhibit 2 • Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device • Sector Group Protection Hardware method disables any combination of sector groups from program or erase operations • Sector Group Protection Set function by Extended sector group protection command • ...

Page 6

... WE 12 RESET 13 N.C. 14 WP/ACC 15 RY/ MBM29DL32TF/BF TSOP (1) (TOP VIEW) (Marking Side Normal Bend FPT-48P-M19 - BYTE V SS ...

Page 7

... MBM29DL32TF/BF (Continued RESET A3 RY/BY WP/ACC -70 FBGA (TOP VIEW) Marking side BYTE N. ...

Page 8

... Data Input/Output Chip Enable OE Output Enable WE Write Enable RESET Hardware Reset Pin/Temporary Sector Group Unprotection RY/BY Ready/Busy Output BYTE Selects 8-bit or 16-bit mode WP/ACC Hardware Write Protection/Program Acceleration V Device Power Supply CC V Device Ground SS N.C. No Internal Connection MBM29DL32TF/BF Function -70 7 ...

Page 9

... MBM29DL32TF/BF BLOCK DIAGRAM Bank A address State RESET Control WE Status CE & OE Command BYTE Control Register WP/ACC Bank D address LOGIC SYMBOL 8 -70 Cell Matrix Cell Matrix 4 Mbit (Bank A) X-Decoder Bank B Address RY/BY Bank C Address X-Decoder Cell Matrix ...

Page 10

... DEVICE BUS OPERATION MBM29DL32TF/BF User Bus Operations Table (Word mode : BYTE Operation Standby H Auto-Select Manufacturer L Code * 1 Auto-Select Device Code * Extended Auto-Select Device Code * Read * L Output Disable L Write (Program/Erase) L Enable Sector Group L Protection * Verify Sector Group Protection ...

Page 11

... MBM29DL32TF/BF MBM29DL32TF/BF User Bus Operations Table (Byte mode : BYTE Operation Standby H X Auto-Select L L Manufacturer Code * 1 Auto-Select Device L L Code * Extended Auto-Select 1 Device Code * L L Read * Output Disable L H Write (Program/Erase Enable Sector Group L V Protection * Verify Sector Group ...

Page 12

... MBM29DL32TF/BF Command Definitions Table* First bus Bus Command write write cycle sequence cycles req’d Addr. Data Addr. Data Word 2 Read/Reset* 1 XXXh F0h Byte Word 555h Read/Reset Byte AAAh Word 555h Autoselect 3 Byte AAAh Word 555h Program 4 Byte AAAh Program Suspend ...

Page 13

... MBM29DL32TF/BF (Continued Command combinations not described in “MBM29DL32TF/BF Command Definitions Table” are illegal Both of these reset commands are equivalent Erase Suspend and Erase Resume command are valid only during a sector erase operation This command is valid during Fast Mode The Reset from Fast mode command is required to return to the Read mode when the device is in Fast mode. ...

Page 14

... MBM29DL32TF Sector Group Protection Verify Autoselect Codes Table Type Byte Manufacture’s BA* 3 Code Word Byte Device Code BA* 3 Word Byte 3 BA* Word Extended Device Code* 4 Byte BA* 3 Word Byte Sector Group Sector Group Protection Addresses Word * for Byte mode. At Byte mode Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses ...

Page 15

... MBM29DL32TF/BF MBM29DL32BF Sector Group Protection Verify Autoselect Codes Table Type Byte Manufacture’s BA* Code Word Byte Device Code BA* Word Byte BA* Word Extended Device Code* 4 Byte BA* Word Byte Sector Group Sector Group Protection Addresses Word * for Byte mode. At Byte mode Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses ...

Page 16

... FLEXIBLE SECTOR-ERASE ARCHITECTURE Sector Address Table (MBM29DL32TF) Sector address B a Sec- Bank n tor address SA0 SA1 SA2 SA3 SA4 SA5 ...

Page 17

... MBM29DL32TF/BF Sector address B a Sec- Bank n tor address SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 ...

Page 18

... SA69 SA70 Notes : The address range The address range MBM29DL32TF/BF Sector size (Kbytes/ Address range Kwords 64/32 380000h to 38FFFFh 1C0000h to 1C7FFFh 64/32 390000h to 39FFFFh 1C8000h to 1CFFFFh ...

Page 19

... MBM29DL32TF/BF Sector address B a Sec- Bank n tor address SA70 SA69 SA68 SA67 SA66 SA65 SA64 SA63 ...

Page 20

... SA18 SA17 SA16 SA15 MBM29DL32TF/BF Sector size (Kbytes/ Address range Kwords 64/32 1F0000h to 1FFFFFh 0F8000h to 0FFFFFh 64/32 1E0000h to 1EFFFFh 0F0000h to 0F7FFFh ...

Page 21

... MBM29DL32TF/BF (Continued) Sector address B a Sec- Bank n tor address SA14 SA13 SA12 SA11 SA10 SA9 SA8 SA7 SA6 ...

Page 22

... Sector Group Addresses Table (MBM29DL32TF) Sector group SGA0 SGA1 SGA2 SGA3 SGA4 SGA5 SGA6 SGA7 SGA8 SGA9 SGA10 SGA11 SGA12 SGA13 SGA14 SGA15 ...

Page 23

... MBM29DL32TF/BF Sector Group Addresses Table (MBM29DL32BF) Sector group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 0 SGA6 0 0 SGA7 0 0 SGA8 0 0 SGA9 0 0 SGA10 0 0 SGA11 0 0 SGA12 0 1 SGA13 0 1 SGA14 0 1 SGA15 ...

Page 24

... Query-unique ASCII string “PRI” 0049h 42h 0031h 43h Major version number, ASCII MBM29DL32TF/BF Description not applicable times typical N ...

Page 25

... Supply Maximum ACC 100 Boot Type 02h MBM29DL32BF 03h MBM29DL32TF Program Suspend 01h Supported Bank Organization X Total Number of Banks Bank A Region Information X Number of sectors in Bank A Bank B Region Information X Number of sectors in Bank B Bank C Region Information X ...

Page 26

... For example, suppose that erasing is taking place at both Bank A and Bank B, neither Bank A nor Bank B is read out (they would output the sequence flag once they were selected.) Meanwhile the system would get to read from either Bank C or Bank D. MBM29DL32TF/BF 64 KB; Bank FlexBank ...

Page 27

... Bank A, Bank B, Bank C and Bank D. Bank Address (BA) means to specify each of the Banks. 2. Standby Mode There are two ways to implement the standby mode on the MBM29DL32TF/BF devices, one using both the CE and RESET pins; the other via the RESET pin only. ...

Page 28

... Read Mode The MBM29DL32TF/BF have two control functions required to obtain data at the outputs the power control and used for a device selection the output control and used to gate data to the output pins if a device is selected. Address access time ( equal to the delay from stable addresses to valid output data ...

Page 29

... Diagram” in TIMING DIAGRAM for the timing diagram. Refer to “9. Temporary Sector Group Unprotection” for additional functionality. 11. Byte/Word Configuration The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29DL32TF/BF devices. When this pin is driven high, the devices operate in the word (16-bit) mode. The data is read and programmed ...

Page 30

... Group Protection”. 13. Accelerated Program Operation MBM29DL32TF/BF offers accelerated program operation which enables the programming in high speed. If the system asserts V to the WP/ACC pin, the device automatically enters the acceleration mode and the ACC time required for program operation will reduce to about 60 ...

Page 31

... verify sector group protection on the protected sector. (See “MBM29DL32TF/BF Sector Group Protection Verify Autoselect Codes Tables” and “MBM29DL32TF/BF Extended Autoselect Code Tables” in DEVICE BUS OPERATION.) The manufacture and device codes can be allowed reading from selected bank. To read the manufacture and device codes and sector group protection status from non-selected bank necessary to write Read/Reset command sequence into the register and then Autoselect command should be written into the bank to be read ...

Page 32

... The system can determine the status of the erase operation by using DQ RY/BY. The chip erase begins on the rising edge of the last CE or WE, whichever happens first in the command sequence and terminates when the data on DQ device returns to read the mode. MBM29DL32TF/BF (Data Polling equivalent to data written to this ...

Page 33

... TOW Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29DL32TF/BF Command Definitions Table” in DEVICE BUS OPERATION. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than “ ...

Page 34

... Extended Command (1) Fast Mode MBM29DL32TF/BF has Fast Mode function. This mode dispenses with the initial two unclock cycles required in the standard program command sequence by writing Fast Mode command into the command register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program command ...

Page 35

... The HiddenROM region is 256 bytes in length and is stored at the same address of SA0 in Bank A. The MBM29DL32TF occupies the address of the byte mode 3FE000h to 3FE0FFh (word mode 1FF000h to 1FF07Fh) and the MBM29DL32BF type occupies the address of the byte mode 000000h to 0000FFh (word mode 000000h to 00007Fh) ...

Page 36

... Program Suspend Read Mode (Non-Program Suspended Sector) Embedded Program Algorithm Embedded Erase Algorithm Exceeded Erase Time Limits Erase Suspend Program Suspended (Non-Erase Suspended Sector) Mode MBM29DL32TF/ and OE, set the sector address in the HiddenROM area specify ( ...

Page 37

... After an erase command sequence is written, if all sectors selected for erasing are protected, Data Polling on DQ Once the Embedded Algorithm operation is close to being completed, the MBM29DL32TF/BF data pins (DQ may change asynchronously while the output enable (OE) is asserted low. This means that the devices are ...

Page 38

... Data Polling is the only operating function of the devices under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA) . The OE and WE pins will control the output disable functions as described in “MBM29DL32TF/BF User Bus Operations Tables (BYTE = V ...

Page 39

... RY/BY Ready/Busy The MBM29DL32TF/BF provide a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/program or erase operation ...

Page 40

... Device user is able to protect each sector group individually to store and protect data. Protection circuit voids both program and erase commands that are addressed to protected sectors. Any commands to program or erase addressed to protected sector are ignored. (See “8. Sector Group Protection” in SCRIPTION.) MBM29DL32TF/BF . LKO V ...

Page 41

... V for periods ns and RESET pins is 0.5 V. During voltage transitions and RESET pins is 13.0 V which may 9 0.5 V. During voltage transitions, WP/ACC pin may undershoot is applied. CC Part No. T MBM29DL32TF/BF- MBM29DL32TF/BF-70 CC GND Rating Unit Min Max 55 125 ° ° ...

Page 42

... MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT 0.6 V 0.5 V 2.0 V Maximum Undershoot Waveform 2.0 V Maximum Overshoot Waveform 1 14 Note : This waveform is applied for A Maximum Overshoot Waveform 2 MBM29DL32TF/ OE, and RESET. 9 -70 41 ...

Page 43

... MBM29DL32TF/BF DC CHARACTERISTICS Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current WP/ACC Accelerated Program Current V Active Current * Active Current * Current (Standby Current (Standby, Reset Current CC (Automatic Sleep Mode Active Current * 6 CC (Read-While-Program) V Active Current * ...

Page 44

... Output Load : 30 pF (MBM29DL32TF/BF-70) Input rise and fall times : 5 ns Input pulse levels : 0 Timing measurement reference level Input : 0 Output : 0 Device Under Test Notes : including jig capacitance (MBM29DL32TF-70, MBM29DL32BF-70) L MBM29DL32TF/BF Symbol JEDEC Standard t t AVAV AVQV ACC t ...

Page 45

... MBM29DL32TF/BF • Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Setup Time to OE Low During Toggle Bit Polling Address Hold Time Address Hold Time from High During Toggle Bit Polling Data Setup Time Data Hold Time Read Output Enable Hold ...

Page 46

... Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable Erase Time-Out Time Erase Suspend Transition Time *1: Does not include the preprogramming time. *2: For Sector Group Protection operation. *3: This timing is limited for Accelerated Program operation only. MBM29DL32TF/BF Symbol Value JEDEC Standard Min Typ ...

Page 47

... MBM29DL32TF/BF ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Program/Erase Cycle Notes : Typical Erase conditions T Typical Program conditions T TSOP (1) PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance WP/ACC Pin Capacitance ...

Page 48

... TIMING DIAGRAM • Key to Switching Waveforms WAVEFORM 1. Read Operation Timing Diagram Address Outputs MBM29DL32TF/BF INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Change Change from from May Will Change Change from from "H" or "L" ...

Page 49

... MBM29DL32TF/BF 2. Hardware Reset/Read Operation Timing Diagram Address RESET High-Z Outputs 3. Alternate WE Controlled Program Operation Timing Diagram 3rd Bus Cycle 555h Address GHWL A0h Data Notes : PA is address of the memory location to be programmed data to be programmed at byte address. ...

Page 50

... D is the output of the data written to the device. OUT Figure indicates the last two bus cycles out of four bus cycle sequence. These waveforms are for the 16 mode. The addresses differ from 8 mode. MBM29DL32TF/BF 3rd Bus Cycle Data Polling 555h ...

Page 51

... MBM29DL32TF/BF 5. Chip/Sector Erase Operation Timing Diagram Address 555h GHWL WE Data t VCS the sector address for Sector Erase. Addresses Note : These waveforms are for the 16 mode. The addresses differ from 8 mode. 50 -70 2AAh 555h 555h ...

Page 52

... Valid Data (the device has completed the Embedded operation Toggle Bit I during Embedded Algorithm Operation Timing Diagram Address OEH / Data t BUSY RY/ stops toggling (the device has completed the Embedded operation MBM29DL32TF/ OEH WHWH1 or WHWH2 Output Flag ...

Page 53

... MBM29DL32TF/BF 8. Bank-to-Bank Read/Write Timing Diagram Read t RC Address BA1 GHWL WE Valid DQ Output Note : This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2. BA1 : Address corresponding to Bank 1 BA2 : Address corresponding to Bank vs Enter Erase Embedded ...

Page 54

... CE WE RY/BY 11. RESET, RY/BY Timing Diagram WE RESET RY/BY 12. Timing Diagram for Word Mode Configuration CE BYTE ELFH MBM29DL32TF/BF Rising edge of the last write pulse Entire programming or erase operations t BUSY READY t CE Data Output Data Output ( ( ...

Page 55

... MBM29DL32TF/BF 13. Timing Diagram for Byte Mode Configuration CE BYTE t ELFL 14. BYTE Timing Diagram for Write Operations BYTE 54 -70 Data Output Data Output ( ( ACC FLQZ Falling edge of the last write pulse ...

Page 56

... VLHT VLHT WE CE Data t VCS V CC SPAX : Sector Group Address to be protected SPAY : Next Sector Address to be protected Note : byte mode MBM29DL32TF/BF t VLHT t WPP t OESP t CSP -70 SPAY t VLHT 01h ...

Page 57

... MBM29DL32TF/BF 16. Temporary Sector Group Unprotection Timing Diagram VCS RESET CE WE RY/BY 56 -70 t VIDR t Program or Erase VLHT Command Sequence Unprotection Period t VLHT t VLHT ...

Page 58

... Data 60h SPAX : Sector Group Address to be protected SPAY : Next Sector Group Address to be protected TIME-OUT : Time-Out window Note : byte mode MBM29DL32TF/ SPAX TIME-OUT 60h 40h 250 s (Min) -70 SPAX SPAY 01h 60h ...

Page 59

... MBM29DL32TF/BF 18. Accelerated Program Timing Diagram VCS V ACC V IH WP/ACC CE WE RY/BY 58 -70 t VACCR t VLHT Program Command Sequence Acceleration Period t VLHT t VLHT ...

Page 60

... FLOW CHART 1. Embedded Program TM Algorithm EMBEDDED ALGORITHMS Increment Address Notes : The sequence is applied for The addresses differ from MBM29DL32TF/BF Start Write Program Command Sequence (See Below) Data Polling Device No Verify Data ? Yes No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command) ...

Page 61

... MBM29DL32TF/BF 2. Embedded Erase TM Algorithm EMBEDDED ALGORITHMS Chip Erase Command Sequence (Address/Command) 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Notes : The sequence is applied for The addresses differ from 60 -70 Start Write Erase Command Sequence (See Below) Data Polling Embedded Erase Algorithm No in progress ...

Page 62

... Data Polling Algorithm rechecked even MBM29DL32TF/BF VA Address for programming Any of the sector addresses within the sector being erased during sector erase or multiple sector Start erases operation. Any of the sector addresses Read Byte within the sector not being ( Addr ...

Page 63

... MBM29DL32TF/BF 4. Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether it is toggling Recheck toggle bit because it may stop toggling -70 Start VA Read Addr Read Addr Toggle? Yes Yes *1, *2 Read ...

Page 64

... Sector Group Protection Algorithm Increment PLSCNT PLSCNT Remove V Write Reset Command Device Failed * : byte mode MBM29DL32TF/BF Start Setup Sector Group Addr PLSCNT RESET ...

Page 65

... MBM29DL32TF/BF 6. Temporary Sector Group Unprotection Algorithm *1 : All protected sector groups are unprotected All previously protected sector groups are reprotected. 64 -70 Start RESET Perform Erase or Program Operations RESET V IH Temporary Sector Group Unprotection Completed *2 ...

Page 66

... Extended Sector Group Protection Algorithm Device is Operating in Temporary Sector Group Unprotection Mode Increment PLSCNT No PLSCNT 25? Yes Remove V from RESET ID Write Reset Command Device Failed MBM29DL32TF/BF Start RESET V ID Wait Extended Sector Group Protection Entry? Yes To Setup Sector Group Protection Write XXXh/60h PLSCNT 1 ...

Page 67

... MBM29DL32TF/BF 8. Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Notes : The sequence is applied for The addresses differ from 66 -70 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No Verify Data? Yes No Last Address ? Yes Programming Completed (BA) XXXh/90h XXXh/F0h 16 mode ...

Page 68

... TSOP (1) MBM29DL32TF70TN MBM29DL32TF70PBT 48-pin plastic TSOP (1) MBM29DL32BF70TN MBM29DL32BF70PBT MBM29DL32 T F DEVICE NUMBER/DESCRIPTION MBM29DL32 32 Mega-bit (4 M 3.0 V-only Read, Program, and Erase MBM29DL32TF/BF Package Access Time (ns) (FPT-48P-M19) (Normal Bend) 48-pin plastic FBGA (BGA-48P-M12) (FPT-48P-M19) (Normal Bend) 48-pin plastic FBGA (BGA-48P-M12 ...

Page 69

... MBM29DL32TF/BF PACKAGE DIMENSIONS 48-pin plastic TSOP (1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 (.787 * 18.40 (.724 "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6 -70 Note Values do not include resin protrusion. Resin protrusion and gate protrusion are 0.15 (.006) Max (each side) . Note 2) Pins width and pins thickness include plating thickness. ...

Page 70

... FBGA (BGA-48P-M12) 9.00±0.20(.354±.008) INDEX C0.25(.010) 0.10(.004) 2001 FUJITSU LIMITED B48012S-c-3-3 C MBM29DL32TF/BF +0.15 +.006 1.05 .041 –0.10 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 6.00±0.20 4.00(.157) (.236±.008 (48-ø.018±.004) Dimensions in mm (inches) Note : The values in parentheses are reference values ...

Page 71

... MBM29DL32TF/BF FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device ...

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