MBM200JS12EW Hitachi, MBM200JS12EW Datasheet
MBM200JS12EW
Manufacturer Part Number
MBM200JS12EW
Description
IGBT POWER MODULE
Manufacturer
Hitachi
Datasheet
1.MBM200JS12EW.pdf
(4 pages)
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Part Number:
MBM200JS12EW
Manufacturer:
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Quantity:
1 000
Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Input Capacitance
Silicon N-channel IGBT
F F F F EA
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Forward Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Notes:(1)RMS Current of Diode 60Arms max.
CHARACTERISTICS (Tc=25
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Switching Times
Peak Forward Voltage Drop
Reverse Recovery Time
Thermal Impedance
Notes:(4) R
diode - ultra soft fast recovery diode(USFD).
I I I I G G G G B B B B T T T T M M M M OD
EAT T T T U U U U RE
EA
EA
MBM200JS12EW
(2)(3)Recommended Value 2.45N.m(25kgf.cm)
OD
ODU U U U L L L L E E E E
OD
RES S S S
RE
RE
Determine the suitable R
(overshoot voltage,etc.)with appliance mounted.
Item
G
value is the test condition’s value for decision of the switching times, not recommended value.
Item
IGBT
FWD
Turn On Time
Rise Time
Fall Time
Turn Off Time
Terminals
Mounting
1ms
1ms
DC
DC
°C
G
)
value after the measurement of switching waveforms
Symbol
Rth(j-c)
Rth(j-c)
V
V
Symbol
I
I
GE(TO)
V
CE(sat)
C
t
GES
t
t
V
V
CES
t
t
V
on
off
FM
T
I
ies
rr
I
r
f
Pc
I
I
T
CES
GES
FM
ISO
Cp
stg
-
-
C
F
j
°C
)
Unit
°C/W
mA
nA
pF
ms
ms
V
V
V
(kgf.cm)
Weight: 470 (g)
Unit
OUTLINE DRAWING
V
N.m
Min.
°C
°C
W
V
V
A
A
RMS
-
-
-
-
-
-
-
-
-
-
-
-
-
3-M6
4- 6.5
21,000
Typ. Max.
0.35
0.25
0.55
2.7
0.2
2.5
-
-
-
-
-
-
0.085
±500 V
0.35 V
0.55 R
0.35 R
0.35 I
0.22
1.0
3.4
1.0
3.5
C2E1
10
C2E1
20
-
TERMINALS
28
V
I
V
V
V
I
C
F
F
CE
GE
CE
CE
CC
L
G
GE
=200A,V
=200A,V
=200A,V
108
93
20
E2
=3.0W
=6.2W
MBM200JS12EW
2,500(AC 1 minute)
E2
=1,200V,V
=5V, I
=10V,V
=600V
=±20V,V
=±15V
28
-40 ~ +150
-40 ~ +125
47
C1
Test Conditions
20
1,200
C
1,470
C1
Junction to case
200
2.94(30)
2.94(30)
GE
GE
GE
±20
200
400
400
0.8
GE
=200mA
G2
E2
E1
G1
CE
=0V
=-10V, di/dt=300A/ms
=15V
=0V,f=1MHz
G2
E2
E1
G1
GE
=0V
=0V
4-Fast-on
Terminal
#110
PDE-M200JS12EW-0
(1)
(4)
Unit in mm
(2)
(3)
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MBM200JS12EW Summary of contents
Page 1
... Unit in mm 4-Fast-on 108 Terminal 93 #110 C2E1 0 C2E1 TERMINALS MBM200JS12EW 1,200 ±20 200 400 200 (1) 400 1,470 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 2.94(30) (2) 2.94(30) (3) Test Conditions 1.0 V =1,200V,V = ±500 V =±20V,V = 3.4 ...
Page 2
VGE=15V 13V12V 400 Tc=25°C 300 Pc=1470W 200 100 Collector to Emitter Voltage, V Collector current vs. Collector to Emitter voltage 10 Tc=25° Ic=400A Ic=200A Gate ...
Page 3
Vcc=600V =±15V V GE =6. =25° Resistive Load 1 0 100 150 Collector Current, I (A) C Switching time vs. Collector current 40 Vcc=600V =±15V V GE =6. =125°C ...
Page 4
... Or consult Hitachi’s sales department staff event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi ...