MBM200GS6AW Hitachi, MBM200GS6AW Datasheet
MBM200GS6AW
Manufacturer Part Number
MBM200GS6AW
Description
IGBT POWER MODULE
Manufacturer
Hitachi
Datasheet
1.MBM200GS6AW.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBM200GS6AW
Manufacturer:
HITACHI/日立
Quantity:
20 000
Part Number:
MBM200GS6AW
Quantity:
60
Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Input Capacitance
Silicon N-channel IGBT
F F F F EA
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Forward Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Notes:(1)RMS Current of Diode 60Arms max.
CHARACTERISTICS (Tc=25
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Switching Times
Peak Forward Voltage Drop
Reverse Recovery Time
Thermal Impedance
Notes:(4) R
diode - ultra soft fast recovery diode(USFD).
I I I I G G G G B B B B T T T T M M M M OD
EAT T T T U U U U RE
EA
EA
MBM200GS6AW
(2)(3)Recommended Value 1.67N.m(17kgf.cm)
OD
ODU U U U L L L L E E E E
OD
RES S S S
RE
RE
Determine the suitable R
(overshoot voltage,etc.)with appliance mounted.
Item
G
value is the test condition’s value for decision of the switching times, not recommended value.
Item
IGBT
FWD
Turn On Time
Rise Time
Fall Time
Turn Off Time
Terminals
Mounting
1ms
1ms
DC
DC
°C
G
)
value after the measurement of switching waveforms
Symbol
Rth(j-c)
Rth(j-c)
V
V
Symbol
I
I
GE(TO)
V
CE(sat)
C
t
GES
t
t
V
V
CES
t
t
V
on
off
FM
T
I
ies
rr
I
r
f
Pc
I
I
T
CES
GES
FM
ISO
Cp
stg
-
-
C
F
j
°C
)
Unit
°C/W
mA
nA
pF
ms
ms
V
V
V
(kgf.cm)
Weight: 200 (g)
Unit
V
N.m
Min.
°C
°C
W
V
V
A
A
RMS
OUTLINE DRAWING
-
-
-
-
-
-
-
-
-
-
-
-
-
2- 5.6
3-M5
9,700
Typ. Max.
0.25
1.9
0.2
0.3
0.6
2.2
-
-
-
-
-
-
±500 V
0.35 R
0.21
C2E1
1.0
2.5
0.4
0.6
0.9
3.0
0.3
0.5
C2E1
10
-
16
TERMINALS
23
V
I
V
V
V
R
V
I
I
C
F
F
CE
GE
CE
CE
CC
L
G
GE
=200A,V
=200A,V
=200A,V
E2
94
80
16
=1.5W
E2
=12W
2,500(AC 1 minute)
MBM200GS6AW
=600V,V
=5V, I
=10V,V
=300V
=±20V,V
=±15V
23
39.5
-40 ~ +150
-40 ~ +125
C1
16
Test Conditions
C
C1
Junction to case
0.8
200
1.96(20)
1.96(20)
GE
GE
GE
600
±20
200
400
400
600
GE
G2
E2
E1
G1
=200mA
GE
CE
=0V
=-10V, di/dt=200A/ms
G2
E2
E1
G1
=15V
=0V,f=1MHz
=0V
=0V
4-Fast-on
Terminal
#110
PDE-M200GS6AW-0
(4)
Unit in mm
(1)
(2)
(3)
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MBM200GS6AW Summary of contents
Page 1
... Unit 4-Fast-on 80 Terminal #110 C2E1 39.5 0 C2E1 TERMINALS MBM200GS6AW 600 ±20 200 400 200 (1) 400 600 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.96(20) (2) 1.96(20) (3) Test Conditions 1.0 V =600V,V = ±500 V =±20V,V = 2.5 ...
Page 2
VGE=15V 13V12V 400 Tc=25°C 300 200 Pc=600W 100 Collector to Emitter Voltage Collector current vs. Collector to Emitter voltage 10 Tc=25° Gate to ...
Page 3
Vcc=300V =±15V V GE =12W R G =25° Resistive Load 1.0 0 100 150 Collector Current, I (A) C Switching time vs. Collector current 20 Vcc=300V =±15V V GE =12W R G =125°C T ...
Page 4
... Or consult Hitachi’s sales department staff event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi ...