S29AL016D SPANSION, S29AL016D Datasheet - Page 53
S29AL016D
Manufacturer Part Number
S29AL016D
Description
16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY
Manufacturer
SPANSION
Datasheet
1.S29AL016D.pdf
(58 pages)
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DataSheet
4
Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
TSOP and BGA Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
December 17, 2004 S29AL016D_00_A2
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
(Note
U
data pattern.
bytes program faster than the maximum program times listed.
command. See
.com
Parameter
Symbol
3)
C
C
C
OUT
IN2
IN
Table 9
A
= 25°C, f = 1.0 MHz.
for further information on command definitions.
Word Mode
Byte Mode
Parameter Description
Control Pin Capacitance
Output Capacitance
Input Capacitance
P r e l i m i n a r y
Typ
CC
= 2.7 V, 1,000,000 cycles.
(Note
0.7
7.2
25
11
5
7
DataSheet4U.com
1)
S29AL016D
Max
Test Setup
21.6
(Note
V
150
210
V
V
10
33
OUT
IN
IN
= 0
= 0
= 0
2)
°
C, V
CC
DataSheet4U.com
= 3.0 V, 100,000 cycles, checkerboard
Package
Unit
µs
µs
TSOP
TSOP
TSOP
s
s
s
s
BGA
BGA
BGA
Excludes 00h programming
prior to erasure
Excludes system level
overhead
Typ
4.2
8.5
5.4
7.5
3.9
6
Comments
(Note
Max
7.5
5.0
6.5
4.7
12
9
(Note
5)
Unit
4)
pF
pF
pF
pF
pF
pF
53