NT256D72S89AKGU Nanya Technology, NT256D72S89AKGU Datasheet - Page 8

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NT256D72S89AKGU

Manufacturer Part Number
NT256D72S89AKGU
Description
256MB DDR SDRAM DIMM
Manufacturer
Nanya Technology
Datasheet
NT256D72S89AKGU
256MB : 32M x 72
Low Profile Registered DDR SDRAM DIMM
DC Electrical Characteristics and Operating Conditions
(TA = 0 °C ~ 70 °C; V
1.
2.
3.
4.
REV 1.1
12/2002
V
Symbol
SS,
V
V
V
V
V
V
IH (DC)
IN (DC)
ID (DC)
IL (DC)
V
V
Inputs are not recognized as valid until V
V
Peak-to-peak noise on V
V
and must track variations in the DC level of V
V
I
I
I
DDQ
REF
OH
OZ
OL
DD
I
TT
REF
TT
ID
V
I
SSQ
is the magnitude of the difference between the input level on CK and the input level on CK.
is not applied directly to the DIMM. V
is expected to be equal to 0.5 V
Supply Voltage
I/O Supply Voltage
Supply Voltage, I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (System)
Input High (Logic1) Voltage
Input Low (Logic0) Voltage
Input Voltage Level, CK and CK Inputs
Input Differential Voltage, CK and CK Inputs
Input Leakage Current
Any input 0V ≤ V
Output Leakage Current
(DQs are disabled; 0V ≤ V
Output High Current
(V
Output Low Current
(V
OUT =
OUT
DDQ
= 0.373, max V
V
DDQ
= 2.5V ± 0.2V; V
-0.373V, min V
REF
IN
may not exceed 2% of the DC value.
≤ V
REF,
DD;
(All other pins not under test = 0V)
out
DD
max V
DDQ
= 2.5V ± 0.2V, See AC Characteristics)
≤ V
REF,
Parameter
REF
TT
DDQ
of the transmitting device, and to track variations in the DC level of the same.
TT)
is a system supply for signal termination resistors, is expected to be set equal to V
min V
stabilizes.
REF
.
TT)
8
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
0.49 x
V
V
REF
REF
-16.8
0.30
16.8
Min
-0.3
-0.3
2.3
2.3
-5
-5
0
+ 0.15
- 0.04
V
DDQ
0.51 x
V
V
V
V
V
REF
REF
DDQ
DDQ
DDQ
Max
2.7
2.7
0
5
5
+ 0.04
-
-
- 0.15
V
+ 0.3
+ 0.3
+ 0.6
DDQ
© NANYA TECHNOLOGY CORP.
Units
mA
mA
uA
uA
V
V
V
V
V
V
V
V
V
Notes
1, 2
1, 3
1, 4
REF,
1
1
1
1
1
1
1
1
1

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