NT256D64S8HA0G-6 Nanya Technology, NT256D64S8HA0G-6 Datasheet - Page 9

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NT256D64S8HA0G-6

Manufacturer Part Number
NT256D64S8HA0G-6
Description
256MB DIMM
Manufacturer
Nanya Technology
Datasheet
NT256D64S8HA0G-6
256MB : 32M x 64
PC2700 Unbuffered DIMM
AC Timing Specifications for DDR SDRAM Devices Used on Module
( T
Preliminary,
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AC
DQSCK
CH
CL
CK
DH
DS
DIPW
HZ
LZ
DQSQ
HP
QH
DQSS
DQSL,H
DSS
DSH
MRD
WPRES
WPST
WPRE
IH
IS
IH
IS
IPW
RPRE
RPST
RAS
RC
RFC
RCD
RAP
RP
RRD
WR
DAL
WTR
XSNR
XSRD
REFI
A
= 0 °C ~ 70 °C ; V
DQ output access time from CK/ CK
DQS output access time from CK/ CK
CK high-level width
CK low-level width
DQ and DM input hold time
DQ and DM input setup time
DQ and DM input pulse width (each input)
Data-out high-impedance time from CK/ CK
Data-out low-impedance time from CK/ CK
DQS-DQ skew (DQS & associated DQ signals)
Minimum half CLK period for any given cycle;
defined by CLK high(t
Data output hold time from DQS
Write command to 1st DQS latching transition
DQS input low (high) pulse width
(write cycle)
DQS falling edge to CK setup time (write cycle)
DQS falling edge hold time from CK (write cycle)
Mode register set command cycle time
Write preamble setup time
Write postamble
Write preamble
Address and control input hold time (fast slew rate)
Address and control input setup time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slewrate)
Input pulse width
Read preamble
Read postamble
Active to Precharge command
Active to Active/Auto-refresh command period
Auto-refresh to Active/Auto-refresh command period
Active to Read or Write delay
Active to Read Command with Autoprecharge
Precharge command period
Active bank A to Active bank B command
Write recovery time
Auto precharge write recovery + precharge time
Internal write to read command delay
Exit self-refresh to non-read command
Exit self-refresh to read command
Average Periodic Refresh Interval
Clock cycle time
11/2001
DDQ
= 2.5V ± 0.2V; V
CH
Parameter
) or CLK low (t
DD
= 2.5V ± 0.2V, See AC Characteristics)
CL
CL=2.5
) time
CL=2
9
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
t
HP
(t
t
(t
CH
WR
RP
0.45
0.45
0.45
0.45
1.75
- 0.75ns
0.75
0.35
0.40
0.25
0.75
0.75
0.40
Min.
-0.7
-0.7
-0.7
-0.7
200
7.5
0.2
0.2
0.8
0.8
2.2
0.9
42
60
72
18
18
18
12
15
75
or t
+
6
2
0
/t
1
/t
CK
CK
CL
)
)
-6
120,000
Max.
+0.7
+0.7
0.55
0.55
+0.7
+0.7
1.25
0.60
0.60
15.6
0.4
1.1
12
12
Unit
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
© NANYA TECHNOLOGY CORP.
2, 3, 4,10, 11,12, 14
2, 3, 4,10, 11,12, 14
2, 3, 4,9, 11,12
2, 3, 4,9, 11,12
1,2,3,4,15,16
1,2,3,4,15,16
1, 2, 3,4, 13
1, 2, 3,4, 5
1, 2, 3,4, 5
1, 2, 3,4, 7
1, 2, 3,4, 6
1, 2, 3,4, 8
2, 3, 4,12
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4
Notes

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