P22NE10L ST Microelectronics, P22NE10L Datasheet
P22NE10L
Available stocks
Related parts for P22NE10L
P22NE10L Summary of contents
Page 1
... POWER MOSFET Feature resulting avalanche INTERNAL SCHEMATIC DIAGRAM = 100 -65 to 175 o ( starting =22A , STP22NE10L - 22A TO-220 TO-220 Value Unit 100 V 100 0 250 mJ o ...
Page 2
... STP22NE10L THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb T Maximum Lead Temperature F or Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbo l Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( ...
Page 3
... Load, see fig. 5) Test Con ditions di/dt = 100 150 (see test circuit, fig. 5) Thermal Impedance STP22NE10L Min. Typ. Max. Unit Min. Typ. Max. Unit 45 ns ...
Page 4
... STP22NE10L Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
Page 5
... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STP22NE10L Normalized On Resistance vs Temperature 5/8 ...
Page 6
... STP22NE10L Fig Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
Page 7
... STP22NE10L inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 P011C 7/8 ...
Page 8
... STP22NE10L Information furnished is believed to be accurate and reliable. However, STMicroelect r onics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice ...