BUR52 STMicroelectronics, BUR52 Datasheet

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... NPN TRANSISTOR MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS ...

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... BUR52 THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Collector Cut-off CEO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage V Emitter-base Voltage EBO ( Collector-emitter CE(sat) Saturation Voltage ...

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... A 11.00 B 1.45 C 2.7 D 8.9 E 19.00 G 10.70 N 16.50 P 25.00 R 3.88 U 38.50 V 30.00 30.14 mm TYP. MAX. 11.7 13.10 1.5 1.60 2.92 9.4 20.00 10.9 11.10 16.9 17.20 26.00 4.2 39.30 30. inch MIN. TYP. 0.433 0.057 0.106 0.350 0.748 0.421 0.429 0.650 0.665 0.984 0.153 1.516 1.181 1.186 P003I BUR52 MAX. 0.516 0.063 0.115 0.370 0.787 0.437 0.677 1.024 0.165 1.547 1.193 3/4 ...

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... BUR52 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...