BCW29 Philips Semiconductors, BCW29 Datasheet - Page 2

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BCW29

Manufacturer Part Number
BCW29
Description
PNP general purpose transistors
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCW31 and BCW32.
MARKING
Note
1.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1999 Apr 13
BCW29
BCW30
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
Low current (max. 100 mA)
Low voltage (max. 32 V).
General purpose switching and amplification.
CBO
CEO
EBO
tot
PNP general purpose transistors
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
C1
C2
(1)
open emitter
open base; I
open collector
T
amb
2
PINNING
handbook, halfpage
25 C
CONDITIONS
PIN
1
2
3
Fig.1 Simplified outline SOT23 and symbol.
Top view
C
= 2 mA
base
emitter
collector
1
3
DESCRIPTION
65
65
BCW29; BCW30
MIN.
2
MAM256
Product specification
250
+150
150
+150
32
32
5
100
200
200
1
MAX.
3
2
V
V
V
mA
mA
mA
mW
C
C
C
UNIT

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