DMBTA55 Dc Components, DMBTA55 Datasheet

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DMBTA55

Manufacturer Part Number
DMBTA55
Description
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
Transition Frequency
Designed for general purpose amplifier applications.
1 = Base
2 = Emitter
3 = Collector
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
DC COMPONENTS CO., LTD.
DISCRETE SEMICONDUCTORS
(1)
Symbol
V
V
V
T
(T
P
CBO
CEO
EBO
T
STG
I
C
Symbol
D
V
J
BV
BV
V
BV
A
I
I
h
h
CE(sat)
BE(on)
=25
CBO
CEO
FE1
FE2
f
CBO
CEO
EBO
T
o
C)
-55 to +150
Rating
+150
-500
225
-60
-60
Min
-60
-60
-4
80
80
50
-4
-
-
-
-
Typ
Unit
mW
mA
o
o
-
-
-
-
-
-
-
-
-
-
V
V
V
C
C
-0.25
Max
-100
-100
-1.2
250
-
-
-
-
-
1
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.026(0.65)
.010(0.25)
Dimensions in inches and (millimeters)
Unit
MHz
nA
nA
V
V
V
V
V
3
-
-
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
.063(1.60)
.055(1.40)
I
I
I
V
V
I
I
I
I
I
C
C
E
C
C
C
C
C
CB
CE
=-100 A
=-100 A
=-1mA
=-100mA, I
=-100mA, V
=-10mA, V
=-100mA, V
=-100mA, V
.051(1.30)
.035(0.90)
Max
=-60V
=-50V
Test Conditions
.108(0.65)
.089(0.25)
DMBTA55
CE
B
CE
CE
CE
=-10mA
.027(0.67)
.013(0.32)
=-1V
=-1V
=-1V
=-1V
.0043(0.11)
.0035(0.09)
SOT-23

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