DMBTA44 Dc Components, DMBTA44 Datasheet
DMBTA44
Manufacturer Part Number
DMBTA44
Description
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DMBTA44.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Designed for applications requiring high breakdown
voltage.
1 = Base
2 = Emitter
3 = Collector
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Output Capacitance
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
DC COMPONENTS CO., LTD.
(1)
DISCRETE SEMICONDUCTORS
(1)
(T
Symbol
V
V
V
T
A
P
=25
CBO
CEO
EBO
T
STG
I
C
Symbol
V
V
V
D
J
V
BV
BV
BV
CE(sat)1
CE(sat)2
CE(sat)3
I
I
h
h
h
h
I
BE(sat)
C
CBO
CES
EBO
o
FE1
FE2
FE3
FE4
CBO
CEO
EBO
ob
C)
-55 to +150
Rating
+150
450
400
300
350
Min
450
400
40
50
45
40
6
6
-
-
-
-
-
-
-
-
Typ
Unit
mW
mA
o
o
4
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
C
C
Max
0.75
0.75
100
500
100
300
0.4
0.5
6
-
-
-
-
-
-
1
.118(3.00)
.110(2.80)
.091(2.30)
.067(1.70)
.026(0.65)
.010(0.25)
Dimensions in inches and (millimeters)
Unit
3
nA
nA
nA
pF
V
V
V
V
V
V
V
-
-
-
-
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
.063(1.60)
.055(1.40)
I
I
I
V
V
V
I
I
I
I
I
I
I
I
V
C
C
E
C
C
C
C
C
C
C
C
.051(1.30)
.035(0.90)
Max
CB
CE
EB
CB
=10 A
=100 A
=1mA
=1mA, I
=10mA, I
=50mA, I
=10mA, I
=1mA, V
=10mA, V
=50mA, V
=100mA, V
=400V
=400V
=4V
=20V, f=1MHz
Test Conditions
.108(0.65)
.089(0.25)
B
DMBTA44
CE
=0.1mA
B
B
B
CE
CE
=1mA
=5mA
=1mA
=10V
CE
.027(0.67)
.013(0.32)
=10V
=10V
=10V
.0043(0.11)
.0035(0.09)
SOT-23
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