DMBTA05 Dc Components, DMBTA05 Datasheet
DMBTA05
Manufacturer Part Number
DMBTA05
Description
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DMBTA05.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Designed for general purpose amplifier applications.
1 = Base
2 = Emitter
3 = Collector
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
Transition Frequency
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
DC COMPONENTS CO., LTD.
DISCRETE SEMICONDUCTORS
(1)
Symbol
V
V
V
T
(T
P
CBO
CEO
EBO
T
STG
I
C
Symbol
D
V
J
BV
BV
BV
V
A
I
I
CE(sat)
h
h
=25
BE(on)
CBO
CEO
FE1
FE2
f
CBO
CEO
EBO
T
o
C)
-55 to +150
Rating
+150
500
225
Min
60
60
100
60
60
80
50
4
4
-
-
-
-
Typ
Unit
mW
mA
o
o
V
V
V
-
-
-
-
-
-
-
-
-
-
C
C
Max
0.25
100
100
250
1.2
-
-
-
-
-
1
.118(3.00)
.110(2.80)
.091(2.30)
.067(1.70)
.026(0.65)
.010(0.25)
Dimensions in inches and (millimeters)
Unit
3
MHz
nA
nA
V
V
V
V
V
-
-
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
.063(1.60)
.055(1.40)
I
I
I
V
V
I
I
I
I
I
C
C
E
C
C
C
C
C
CB
CE
=100 A
=100 A
=1mA
=100mA, I
=100mA, V
=10mA, V
=100mA, V
=10mA, V
.051(1.30)
.035(0.90)
Max
=60V
=60V
Test Conditions
.108(0.65)
.089(0.25)
DMBTA05
CE
CE
B
CE
CE
=10mA
=2V, f=100MHz
=1V
.027(0.67)
.013(0.32)
=1V
=1V
.0043(0.11)
.0035(0.09)
SOT-23
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