PBSS2515F Philips Semiconductors, PBSS2515F Datasheet - Page 5

• Manufacturer Part Number: PBSS2515F
• Description: low VCEsat NPN transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2001 Sep 21
handbook, halfpage
15 V low V
T
(1) I
(2) I
(3) I
(4) I
Fig.6
amb
(mA)
1200
I C
800
400
B
B
B
B
= 25 C.
0
= 4.60 nA.
= 4.14 nA.
= 3.68 nA.
= 3.22 nA.
0
Collector current as a function of
collector-emitter voltage; typical values.
2
CEsat
(5) I
(6) I
(7) I
(8) I
4
B
B
B
B
NPN transistor
= 2.76 nA.
= 2.30 nA.
= 1.84 nA.
= 1.38 nA.
(4)
6
(3)
(2)
(9) I
(10) I
8
(10)
V CE (V)
(5)
(1)
(6)
(7)
(8)
(9)
B
B
MLD672
= 0.92 nA.
= 0.46 nA.
10
5
handbook, halfpage
R CEsat
I
(1) T
(2) T
(3) T
Fig.7
C
/I
( )
10
B
10
= 20.
10
amb
amb
amb
10
1
2
1
1
= 150 C.
= 25 C.
= 55 C.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
1
(1)
(3)
10
(2)
PBSS2515F
Product specification
10
2
I C (mA)
MLD676
10
3