BF470 Philips Semiconductors, BF470 Datasheet - Page 3

• Manufacturer Part Number: BF470
• Description: PNP high-voltage transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead
CHARACTERISTICS
T
1996 Dec 09
V
V
V
I
I
I
P
T
T
T
R
R
I
I
h
V
C
f
SYMBOL
SYMBOL
SYMBOL
j
C
CM
BM
CBO
EBO
T
FE
stg
j
amb
CBO
CEO
EBO
tot
= 25 C unless otherwise specified.
CEsat
PNP high-voltage transistors
th j-a
th j-mb
re
minimum 10
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
feedback capacitance
transition frequency
BF470
BF472
BF470
BF472
10 mm.
PARAMETER
PARAMETER
PARAMETER
open emitter
open base
open collector
T
I
I
I
I
I
I
E
E
C
C
C
C
C
mb
= 0; V
= 0; V
= 0; V
= 25 mA; V
= 30 mA; I
= i
= 10 mA; V
c
114 C
= 0; V
CB
CB
EB
3
= 200 V
= 200 V; T
= 5 V
CE
CONDITIONS
CONDITIONS
B
CE
CE
= 30 V; f = 1 MHz
in free air; note 1
= 5 mA
= 20 V
= 10 V; f = 100 MHz 60
CONDITIONS
j
= 150 C
50
65
65
MIN.
MIN.
VALUE
BF470; BF472
100
20
Product specification
1.8
+150
150
+150
1.8
MAX.
MAX.
250
300
250
300
5
50
100
50
10
10
50
600
UNIT
K/W
K/W
V
V
V
V
V
mA
mA
mA
W
nA
nA
mV
pF
MHz
C
C
C
A
UNIT
UNIT