BF422L Philips Semiconductors, BF422L Datasheet - Page 2

• Manufacturer Part Number: BF422L
• Description: NPN high-voltage transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complements: BF421L and BF423L.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 21
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
Low current (max. 50 mA)
High voltage (max. 300 V).
Telephony.
CBO
CEO
EBO
tot
NPN high-voltage transistor
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
open emitter
open base
open collector
T
amb
2
PINNING
25 C; note 1
handbook, halfpage
CONDITIONS
PIN
1
2
3
Fig.1
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
base
collector
emitter
DESCRIPTION
65
65
MIN.
Product specification
MAM259
250
250
5
50
100
50
625
+150
150
+150
MAX.
BF422L
1
V
V
V
mA
mA
mA
mW
2
3
C
C
C
UNIT