BF423L Philips Semiconductors, BF423L Datasheet - Page 3

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BF423L

Manufacturer Part Number
BF423L
Description
(BF421L / BF423L) PNP high-voltage transistors
Manufacturer
Philips Semiconductors
Datasheet
www.DataSheet4U.com
Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Nov 10
R
I
I
h
V
C
f
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
PNP high-voltage transistors
th(j-a)
re
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
p
300 s;
PARAMETER
PARAMETER
0.02.
V
V
V
V
I
V
V
C
CB
CB
EB
CE
CE
CE
= 30 mA; I
= 5 V; I
= 200 V; I
= 200 V; I
= 20 V; I
= 30 V; I
= 10 V; I
note 1
3
CONDITIONS
C
C
B
C
C
= 0 A
E
E
= 5 mA; note 1
= 25 mA
= i
= 10 mA; f = 100 MHz 60
CONDITIONS
= 0 A
= 0 A; T
c
= 0 A; f = 1 MHz
j
= 150 C
BF421L; BF423L
50
MIN.
VALUE
200
Product specification
1.6
MAX.
10
10
10
600
UNIT
K/W
nA
mV
pF
MHz
UNIT
A
A

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