BF410A Philips Semiconductors, BF410A Datasheet - Page 2

• Manufacturer Part Number: BF410A
• Description: N-channel silicon field-effect transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in a plastic TO-92 variant;
intended for applications up to the
VHF range.
These FETs can be supplied in four
I
low feedback capacitance and the low
noise figure. Thanks to these special
features the BF410 is very suitable for
applications such as the RF stages in
FM portables (type A), car radios
(type B) and mains radios (type C) or
the mixer stage (type D).
QUICK REFERENCE DATA
December 1990
DSS
Drain-source voltage
Drain current (DC or average)
Total power dissipation
Drain current
Transfer admittance
Feedback capacitance
Noise figure at optimum source admittance
N-channel silicon field-effect transistors
up to T
V
V
V
V
G
V
V
DS
DS
DS
DS
DS
DS
groups. Special features are the
S
= 1 mS; B
= 10 V; V
= 10 V; V
= 10 V; V
= 10 V; I
= 10 V; V
= 10 V; I
amb
= 75 C
D
D
GS
GS
GS
GS
S
= 5 mA
= 5 mA
= 3 mS; f = 100 MHz
= 0
= 0; f = 1 kHz
= 0
= 0
PINNING - TO-92 VARIANT
1 = drain
2 = source
3 = gate
handbook, halfpage
2
V
I
P
I
C
C
F
F
D
DSS
Fig.1 Simplified outline and symbol
DS
tot
y
rs
rs
1
fs
2
3
max.
max.
max.
min.
max.
min.
typ.
typ.
typ.
typ.
BF410A
1.5
0.7
3.0
2.5
0.5
MAM257
1.5
B
2.5
7.0
0.5
4
g
300
20
30
C
Product specification
BF410A to D
0.5
1.5
12
6
6
d
s
D
0.5 pF
1.5 dB
10 mA
18 mA
7 mS
V
mA
mW
pF
dB