BFY450H Infineon Technologies AG, BFY450H Datasheet - Page 2

• Manufacturer Part Number: BFY450H
• Description: HiRel NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies AG

Maximum Ratings
Thermal Resistance
Notes.:
1) At T
2) T
Electrical Characteristics
at T
Notes:
1.) This Test assures V(BR)
Semiconductor Group
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
Junction temperature
Operating temperature range
Storage temperature range
Junction-soldering point
Parameter
DC Characteristics
Collector-base cutoff current
V
Collector-emitter cutoff current
V
Emitter-base cuttoff current
V
DC current gain
I
C
S
CB
CE
EB
= 20 mA, V
A
S
=25°C; unless otherwise specified
= 1.5 V, I
= 5 V, I
= 4.5 V, I
is measured on the collector lead at the soldering point to the pcb.
S
110°C
= + 110 °C. For T
E
= 0
C
B
CE
1), 2)
= 1.0µA
= 0
= 1 V
2)
S
> + 110 °C derating is required.
CE0
1.)
> 4.5V
Symbol
V
V
V
I
I
P
T
T
T
R
Symbol
I
I
I
h
C
B
CBO
CEX
EBO
FE
j
op
stg
CEO
CBO
EBO
tot
th JS
2 of 5
min.
-
-
-
50
Values
4.5
15
1.5
100
10
450
175
-65...+175
-65...+175
<
145
Values
typ.
-
-
-
90
max.
100
200
(t.b.d.)
50
150
Draft B, September 99
Unit
nA
µA
-
BFY450
A
Unit
V
V
V
mA
mA
mW
K/W
C
C
C