BFP180W Siemens Semiconductor Group, BFP180W Datasheet

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BFP180W

Manufacturer Part Number
BFP180W
Description
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
Manufacturer
Siemens Semiconductor Group
Datasheet
NPN Silicon RF Transistor
ESD: Electrostatic discharge sensitive device, observe handling precaution!
1) T
• For low-power amplifiers in mobile
• F = 2.1dB at 900MHz
Type
BFP 180W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Semiconductor Group
communication systems (pager) at collector
currents from 0.2 to 2.5mA
f
S
T
S
= 7GHz
is measured on the collector lead at the soldering point to the pcb.
126 °C
Marking Ordering Code
RDs
Q62702-F1500
1)
1
Symbol
V
V
V
V
I
I
P
T
T
T
R
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
Pin Configuration
1 = E
2 = C
3 = E
- 65 ... + 150
- 65 ... + 150
Values
150
10
10
0.5
30
8
2
4
785
4 = B
BFP 180W
Package
SOT-343
Dec-12-1996
Unit
V
mA
mW
°C
K/W

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BFP180W Summary of contents

Page 1

NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA f = 7GHz T • 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB Collector-emitter capacitance ...

Page 4

SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.18519 fA VAF = 26.867 1.9818 - VAR = 3.2134 1.6195 - RBM = 60 CJE = 3.2473 ...

Page 5

Total power dissipation P * Package mounted on epoxy tot Permissible Pulse Load thJS K ...

Page 6

Collector-base capacitance 1MHz 0.3 0.2 0.1 0 Power Gain 0.9GHz V ...

Page 7

Power Gain Parameter 18 I =1mA ...

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