NESG2021M16-T3 California Micro Devices Corp, NESG2021M16-T3 Datasheet - Page 2

• Manufacturer Part Number: NESG2021M16-T3
• Description: NPN SiGe HIGH FREQUENCY TRANSISTOR
• Manufacturer: California Micro Devices Corp

NESG2021M16
ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result
2. Mounted on 1.08 cm
ORDERING INFORMATION
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
SYMBOLS
NESG2021M16-T3 10 K pcs
in permanent damage.
PART NUMBER
V
V
V
T
P
CBO
CEO
EBO
T
STG
I
C
T
J
2
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
PARAMETERS
2
reel
QUANTITY
x 1.0 mm (t) glass epoxy PCB.
Pin 1 (Collector), Pin 6
(Emitter) face the perforation
side of the tape
SUP PLY ING FORM
UNITS
mW
mA
°C
°C
V
V
V
1
(T
-65 to +150
RATINGS
A
= 25°C)
13.0
175
150
5.0
1.5
35
OUTLINE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD
PACKAGE OUTLINE M16
PIN CONNECTIONS
1. Collector
2. Emitter
3. Emitter
1.0±0.05
0.8
(Units in mm)
+0.07
-0.05
4. Base
5. Emitter
6. Emitter
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
09/23/2003