BFQ70 Siemens Semiconductor Group, BFQ70 Datasheet

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BFQ70

Manufacturer Part Number
BFQ70
Description
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)
Manufacturer
Siemens Semiconductor Group
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFQ70
Manufacturer:
SIEMENS
Quantity:
575
NPN Silicon RF Transistor
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, V
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, T
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - soldering point
1)
2)
3)
For low-noise IF and broadband amplifiers in
antenna and telecommunications systems at
collector currents from 2 mA to 20 mA.
Hermetically sealed ceramic package
HiRel/Mil screening available.
For detailed dimensions see chapter Package Outlines.
Package mounted on alumina 16 mm 25 mm 0.7 mm.
T
S
is measured on the collector lead at the soldering point to the pcb.
Marking
70
2)
3)
S
BE
121 ˚C
= 0
Ordering Code
(tape and reel)
Q62702-F774
3)
Symbol
V
V
V
V
I
I
P
T
T
T
R
R
C
B
j
A
stg
CE0
CES
CB0
EB0
tot
th JA
th JS
Pin Configuration
B
1
Values
15
20
20
2.5
35
4
300
175
– 65 … + 175
– 65 … + 175
E
2
260
180
C
3
E
4
Unit
V
mA
mW
˚C
K/W
Package
Cerex-X
BFQ 70
1)

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BFQ70 Summary of contents

Page 1

NPN Silicon RF Transistor For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from mA. Hermetically sealed ceramic package HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type ...

Page 2

Electrical Characteristics ˚C, unless otherwise specified. A Parameter DC Characteristics Collector-emitter breakdown voltage = 1 mA Collector-base cutoff current = Emitter-base cutoff ...

Page 3

Electrical Characteristics ˚C, unless otherwise specified. A Parameter AC Characteristics Transition frequency = 3 mA 200 MHz mA ...

Page 4

Total power dissipation tot *Package mounted on alumina Collector-base capacitance MHz Transition frequency ...

Page 5

Common Emitter Noise Parameters ( min p min GHz mA 0.01 0.8 – mA ...

Page 6

Circles of constant noise figure -plane mA Noise figure 800 MHz Power gain ...

Page 7

Common Emitter Power Gain Power gain 21e 200 MHz Power gain ...

Page 8

Power gain (f) ms 21e = 2 mA Power gain 21e ...

Page 9

Common Emitter S Parameters GHz MAG ANG = 2 mA 0.1 0.92 – 23 0.2 0.89 – 45 0.3 0.84 – 65 0.4 0.80 – 82 ...

Page 10

Common Emitter S Parameters (continued GHz MAG ANG = 5 mA 0.1 0.84 – 35 0.2 0.78 – 66 0.3 0.72 – 90 0.4 0.69 – ...

Page 11

Common Emitter S Parameters (continued GHz MAG ANG = 10 mA 0.1 0.73 – 50 0.2 0.67 – 89 0.3 0.63 – 114 0.4 0.62 – ...

Page 12

Common Emitter S Parameters (continued GHz MAG ANG = 15 mA 0.1 0.67 – 62 0.2 0.62 – 104 0.3 0.59 – 128 0.4 0.60 – ...

Page 13

Common Emitter S Parameters (continued GHz MAG ANG = 20 mA 0.1 0.63 – 71 0.2 0.60 – 113 0.3 0.58 – 136 0.4 0.59 – ...

Page 14

Common Emitter S Parameters (continued GHz MAG ANG = 10 mA 0.1 0.75 – 45 0.2 0.69 – 83 0.3 0.63 – 109 0.4 0.62 – ...

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