BFQ226 Philips Semiconductors, BFQ226 Datasheet - Page 3

• Manufacturer Part Number: BFQ226
• Description: NPN video transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
1996 Sep 04
handbook, halfpage
R
V
V
V
I
h
f
C
SYMBOL
SYMBOL
j
CES
T
FE
= 25 C unless otherwise specified.
(BR)CBO
(BR)CER
(BR)EBO
NPN video transistor
th j-s
re
T
s
(mA)
s
I C
= 60 C.
10
10
is the temperature of the soldering point of the collector pin.
10
3
2
10
thermal resistance from junction to
soldering point
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
transition frequency
feedback capacitance
Fig.2 DC SOAR.
PARAMETER
PARAMETER
10
2
V CE (V)
MBG491
10
3
P
I
I
V
I
see Fig.4
I
f = 500 MHz; see Fig.5
I
see Fig.6
C
C
C
C
C
C
tot
CE
= 0.1 mA; I
= 1 mA; R
= 0; I
= 25 mA; V
= 25 mA; V
= 0; V
= 3 W; up to T
= 50 V; V
E
CONDITIONS
CB
3
= 0.1 mA
= 10 V; f = 1 MHz;
handbook, halfpage
BE
CONDITIONS
E
CE
CE
BE
V
= 0
= 100
CE
P tot
(W)
= 0
= 10 V;
= 10 V;
s
4
3
2
1
0
50 V.
= 60 C; note 1
0
Fig.3 Power derating curve.
100
95
3
20
MIN.
100
1
1.7
TYP.
VALUE
38.5
T s (
Product specification
o
100
C)
MAX.
BFQ226
MBG492
200
UNIT
K/W
V
V
V
GHz
pF
UNIT
A