BFQ151 Philips Semiconductors, BFQ151 Datasheet - Page 3

• Manufacturer Part Number: BFQ151
• Description: PNP video transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
1997 Sep 19
handbook, halfpage
R
V
V
V
I
h
f
C
SYMBOL
SYMBOL
j
CBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
th j-s
= 25 C unless otherwise specified.
re
PNP video transistor
P tot
s
(W)
1.6
1.2
0.8
0.4
is the temperature of the soldering point of the collector pin.
0
0
thermal resistance from junction to soldering point
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector-base leakage current
DC current gain
transition frequency
feedback capacitance
Fig.2 Power derating curve.
PARAMETER
100
PARAMETER
T s (
o
C)
MBK241
200
I
I
V
I
see Fig.3
I
f
see Fig.5
I
f = 1 MHz; see Fig.4
C
C
C
C
C
m
C
CB
= 0.1 mA; I
= 10 mA; I
= 0; I
= 70 mA; V
= 70 mA; V
= 0; V
= 500 MHz; T
= 10 V; I
E
CONDITIONS
CB
3
= 0.1 mA
= 10 V;
handbook, halfpage
B
E
V
E
CE
CE
T
CE
= 0
= 0
amb
h FE
= 0
s
= 10 V; T
= 10 V;
= 10 V;
80
60
40
20
0
Fig.3
60 C; note 1
= 25 C;
0
CONDITIONS
amb
DC current gain as a function of
collector current; typical values.
20
= 25 C.
25
20
15
3
MIN.
40
3.5
1.8
TYP.
60
Product specification
VALUE
80
MAX.
1
I C (mA)
90
BFQ151
MBK242
100
V
V
V
GHz
pF
UNIT
UNIT
A
K/W