BFG590W Philips Semiconductors, BFG590W Datasheet

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BFG590W

Manufacturer Part Number
BFG590W
Description
NPN 5 GHz wideband transistors
Manufacturer
Philips Semiconductors
Datasheet
Product specification
Supersedes data of August 1995
book, halfpage
DATA SHEET
BFG590W; BFG590W/X
NPN 5 GHz wideband transistors
M3D123
1998 Oct 15

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BFG590W Summary of contents

Page 1

... DATA SHEET book, halfpage BFG590W; BFG590W/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 M3D123 1998 Oct 15 ...

Page 2

... GHz mA 900 MHz mA 900 MHz Product specification BFG590W; BFG590W/X page Top view Fig.1 SOT343N. MARKING TYPE NUMBER CODE BFG590W BFG590W/X MIN. TYP. MAX. UNIT ...

Page 3

... Fig.2 Power derating curve. 1998 Oct 15 CONDITIONS open emitter open base open collector see Fig.2; note MBG248 150 200 Product specification BFG590W; BFG590W/X MIN. MAX 200 500 65 +150 175 CONDITIONS VALUE 85 C; note 1 180 UNIT ...

Page 4

... G maximum unilateral power gain; UM note insertion power gain 21 P output power gain L1 compression Note the maximum unilateral power gain, assuming S UM 1998 Oct 15 BFG590W; BFG590W/X CONDITIONS I = 0 0.1 mA ...

Page 5

... Transition frequency as a function of collector current; typical values. 1998 Oct 15 MRA749 handbook, halfpage (mA MLC058 (mA Product specification BFG590W; BFG590W/X 1 (pF) 0.8 0 MHz. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. MLC057 ...

Page 6

... Oct 15 MLC059 handbook, halfpage G max 100 I (mA GHz; V MLC061 handbook, halfpage G max (MHz BFG590W; BFG590W/X 12 gain (dB Fig.7 Gain as a function of collector current; typical values. 50 gain (dB MSG 30 20 ...

Page 7

... Fig.11 Common emitter forward transmission coefficient (S 1998 Oct 135 0.5 3 GHz 0.2 0.2 0 0.2 0.5 o 135 135 40 MHz 3 GHz 135 BFG590W; BFG590W/X 1 0.6 0 MHz MLC063 1.0 ); typical values MLC064 ); typical values. 21 Product specification ...

Page 8

... Fig.13 Common emitter output reflection coefficient (S 1998 Oct 135 0.5 0.4 0.3 0.2 0.1 40 MHz o 135 135 0.5 0.2 0.2 0 GHz 0.2 0.5 o 135 Product specification BFG590W; BFG590W/X 3 GHz MLC065 ); typical values. 12 1 0.6 0 MHz MLC066 1.0 ); typical values. 22 ...

Page 9

... Philips Semiconductors NPN 5 GHz wideband transistors SPICE parameters for the BFG590W die SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE 25 TF ...

Page 10

... VERSION IEC SOT343N 1998 Oct scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 REFERENCES JEDEC EIAJ 10 BFG590W; BFG590W detail 2.2 0.45 0.23 0.2 0.2 2.0 0.15 0.13 EUROPEAN PROJECTION Product specification SOT343N 0.1 ISSUE DATE ...

Page 11

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Oct 15 BFG590W; BFG590W/X 11 Product specification ...

Page 12

... Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel ...

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