BFG520W Philips Semiconductors, BFG520W Datasheet
BFG520W
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BFG520W Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage BFG520W; BFG520W/X NPN 9 GHz wideband transistors Product specification Supersedes data of August 1995 M3D123 1998 Oct 02 ...
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... mA 900 MHz mA 900 MHz mA 900 MHz s opt Product specification BFG520W; BFG520W/X DESCRIPTION BFG250W 1 collector collector 2 base emitter 3 emitter base 4 emitter emitter Top view MBK523 Fig ...
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... Fig.2 Power derating curve. 1998 Oct 02 CONDITIONS open emitter open collector see Fig.2; note MBG248 150 200 Product specification BFG520W; BFG520W/X MIN. MAX 2.5 70 500 65 +150 175 CONDITIONS VALUE 85 C; note 1 180 UNIT ...
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... 805.25 MHz; measured amb + f = 810 MHz BFG520W; BFG520W/X MIN. TYP 2 see Fig.3 60 120 0. GHz 900 MHz GHz 900 MHz ...
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... Oct 02 MLB807 handbook, halfpage C re (pF (mA MHz. C MLB809 (mA Product specification BFG520W; BFG520W/X 0.6 0.4 0 2.5 5 7.5 Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. MLB808 10 V (V) CB ...
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... (mA GHz; V MLB812 handbook, halfpage gain (dB) G max (MHz mA Product specification BFG520W; BFG520W MSG Fig.7 Gain as a function of collector current; typical values MSG ...
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... Fig.11 Second order intermodulation distortion as a MLB820 handbook, halfpage G ass (dB 2000 MHz 1000 MHz 900 MHz 500 MHz (mA Product specification BFG520W; BFG520W mV 810 MHz ...
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... Fig.14 Minimum noise figure as a function of frequency; typical values. 1998 Oct 02 MLB822 20 handbook, halfpage G ass (dB (MHz Fig.15 Associated available gain as a function 8 Product specification BFG520W; BFG520W (MHz) of frequency; typical values. MLB823 4 10 ...
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... F = 1.1 dB min 0 0.5 o 135 135 0.5 (4) 0.2 (3) (2) 0.2 1 0.5 0 (1) (5) 0.2 (6) (7) (8) 0.5 o 135 Product specification BFG520W; BFG520W/X 1 0.6 0 MLB824 1.0 1 0.6 0 MLB825 1.0 ...
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... Oct 135 0.5 0.2 3 GHz 0.2 1 0.5 0 0.2 0.5 o 135 135 40 MHz 3 GHz 135 Product specification BFG520W; BFG520W/X 1 0.6 0 MHz MLB814 1.0 ); typical values MLB815 ); typical values. 21 ...
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... Fig.21 Common emitter output reflection coefficient (S 1998 Oct 135 40 MHz 0.25 0.20 0.15 0.10 0.05 o 135 135 0.5 0.2 0 GHz 0.2 0.5 o 135 Product specification BFG520W; BFG520W/X 3 GHz MLB816 ); typical values. 12 1 0.6 0 MHz MLB817 1.0 ); typical values. 22 ...
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... Philips Semiconductors NPN 9 GHz wideband transistors SPICE parameters for the BFG520W die SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE 25 TF ...
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... VERSION IEC SOT343N 1998 Oct scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 REFERENCES JEDEC EIAJ 13 BFG520W; BFG520W detail 2.2 0.45 0.23 0.2 0.2 2.0 0.15 0.13 EUROPEAN PROJECTION Product specification SOT343N 0.1 ISSUE DATE ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Oct 02 BFG520W; BFG520W/X 14 Product specification ...
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... Philips Semiconductors NPN 9 GHz wideband transistors 1998 Oct 02 BFG520W; BFG520W/X NOTES 15 Product specification ...
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... Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel ...