BFG325XR NXP Semiconductors, BFG325XR Datasheet

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BFG325XR

Manufacturer Part Number
BFG325XR
Description
NPN 14 GHz wideband transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BFG325XR.pdf (12 pages)
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
Table 1:
Symbol Parameter
V
V
I
P
h
C
f
G
C
T
FE
CBO
CEO
tot
CBS
max
BFG325W/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability
Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
analog and digital cellular telephones
cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
radar detectors
pagers
Satellite Antenna TeleVision (SATV) tuners
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
collector-base
capacitance
transition frequency
maximum power gain
Quick reference data
[2]
Conditions
open emitter
open base
T
I
T
V
emitter grounded
I
f = 1 GHz; T
I
f = 1.8 GHz; T
C
C
C
sp
j
CB
= 25 C
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 V; f = 1 MHz;
90 C
amb
CE
CE
CE
amb
= 25 C
= 3 V;
= 3 V;
= 3 V;
= 25 C
Product data sheet
[1]
Min
-
-
-
-
60
-
-
-
www.DataSheet4U.com
Typ
-
-
-
-
100
0.27
14
18.3
Max
15
6
35
210
200
0.4
-
-
Unit
V
V
mA
mW
pF
GHz
dB

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BFG325XR Summary of contents

Page 1

BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features High power gain Low noise figure High transition ...

Page 2

Philips Semiconductors Table 1: Symbol Parameter [ the temperature at the soldering point of the collector pin the maximum power gain > < 1 then ...

Page 3

Philips Semiconductors Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol tot T stg the temperature at the soldering point of the collector pin Thermal characteristics ...

Page 4

Philips Semiconductors 250 P tot (mW) 200 150 100 100 Fig 1. Power derating curve 0.34 C CBS (pF) 0.30 0. MHz. C Fig ...

Page 5

Philips Semiconductors V Fig 5. Common emitter input reflection coefficient (s V Fig 6. Common emitter forward transmission coefficient (s 9397 750 14246 Product data sheet 135 0.5 0.2 3 GHz 0 0.2 0.5 180 0.2 0.5 135 = 3 ...

Page 6

Philips Semiconductors V Fig 7. Common emitter reverse transmission coefficient (s V Fig 8. Common emitter output reflection coefficient (s 9397 750 14246 Product data sheet 135 0.5 0.4 0.3 0.2 0.1 180 135 = ...

Page 7

Philips Semiconductors 8. Application information Table 8: Sequence ...

Page 8

Philips Semiconductors Fig 9. Package equivalent circuit of SOT343R Table 9: Designation C_base_pad C_emitter_pad L C_wire L B_wire L E_wire L C_lead L B_lead L E_lead 9397 750 14246 Product data sheet C CB ...

Page 9

Philips Semiconductors 9. Package outline Plastic surface mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 1.1 ...

Page 10

Philips Semiconductors 10. Revision history Table 10: Revision history Document ID Release date BFG325W_XR_1 20050202 9397 750 14246 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 2 February 2005 BFG325W/XR www.DataSheet4U.com NPN 14 ...

Page 11

Philips Semiconductors 11. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 12

Philips Semiconductors 15. Contents 1 Product profi 1.1 General description ...

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