PTF10111 Ericsson, PTF10111 Datasheet - Page 2

• Manufacturer Part Number: PTF10111
• Description: 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor
• Manufacturer: Ericsson

PTF 10111
Electrical Characteristics
RF Specifications
Typical Performance
Characteristic
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Characteristic
Common Source Power Gain
Power Output at 1 dB Compressed
Drain Efficiency
Load Mismatch Tolerance
(V
(V
(V
all phase angles at frequency of test)
(V
14
11
DD
DD
DD
8
5
DD
1300
Typical P
= 28 V, P
= 28 V, I
= 28 V, P
= 28 V, P
Gain
V
I
DQ
DD
= 75 mA
1400
DQ
= 28 V
OUT
OUT
OUT
OUT
Frequency (MHz)
= 75 mA, f = 1.5 GHz)
, Gain & Efficiency
vs. Frequency
= 6 W, I
= 6 W, I
= 6 W, I
(100% Tested)
1500
DQ
DQ
DQ
Output Pow er (W)
= 75 mA, f = 1.5 GHz)
= 75 mA, f = 1.5 GHz)
= 75 mA, f = 1.5 GHz—
Efficiency (%)
Conditions
V
V
V
V
(100% Tested)
1600
GS
DS
DS
DS
= 28 V, V
= 10 V, I
= 10 V, I
= 0 V, I
(at P-1dB)
D
1700
D
D
= 40 mA
GS
= 75 mA
= 0.5 A
90
80
70
60
50
40
30
20
10
0
= 0 V
2
Symbol
Symbol
V
16
15
14
13
12
V
(BR)DSS
1450
P-1dB
I
GS(th)
G
DSS
g
Broadband Test Fixture Performance
fs
ps
D
Gain (dB)
1475
Min
Min
15.0
3.0
65
—
—
45
—
6
Frequency (MHz)
V
I
P
DQ
DD
OUT
1500
= 75 mA
= 28 V
Typ
Typ
= 6 W
0.2
68
—
—
16
50
—
7
Return Loss (dB)
Efficiency (%)
1525
Max
Max
30:1
5.0
—
—
—
—
—
1
1550
Siemens
Units
Units
Watts
Volts
Volts
mA
- 5
-15
-25
-35
dB
—
%
60
50
40
30
20
10
0