3SK309 Hitachi Semiconductor, 3SK309 Datasheet - Page 2

• Manufacturer Part Number: 3SK309
• Description: GaAs N Channel Dual Gate MES FET UHF RF Amplifier
• Manufacturer: Hitachi Semiconductor

3SK309
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Gate 1 to cutoff current
Gate 2 to cutoff current
Gate 1 to source cutoff voltage V
Gate 2 to source cutoff voltage V
Zero gate voltege drain current I
Forward transfer admittance
Power gain
Noise figure
Power gain
Noise figure
Note: Marking is “XV–”
2
Symbol
I
I
|y
PG
NF
PG
NF
G1SS
G2SS
DSS
G1S(off)
G2S(off)
fs
|
Symbol
V
V
V
I
Pch
Tch
Tstg
D
DS
G1S
G2S
Min
—
—
–0.2
–0.2
25
30
18
—
—
—
Typ
—
—
—
—
40
40
21
1.25
20
1.3
Max
–20
–20
–1.5
–1.5
60
—
—
1.5
—
—
Ratings
6
–4
–4
18
100
125
–55 to +125
Unit
V
V
mA
mS
dB
dB
dB
dB
A
A
Test conditions
V
V
V
V
V
I
V
I
V
V
V
I
V
I
V
I
D
D
D
D
D
G1S
G2S
G2S
G1S
DS
DS
DS
G2S
DS
DS
DS
= 100 A
= 100 A
= 5 mA, f = 1 kHz
= 5 mA, f = 900 MHz
= 3 mA, f = 900 MHz
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, V
= 1.5 V, V
= –4 V
= V
= –4 V
= V
= 0
Unit
V
V
V
mA
mW
DS
DS
C
C
= 0
= 0
G2S
G1S
G1S
G2S
G2S
G2S
= 0
= 0
= 0
= 0
= 0
= 0